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The Distributed Heat Source Modeling Method for the Finite Element Simulation of IGBTs

机译:IGBT的有限元模拟的分布式热源建模方法

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摘要

The determination of the heat source has a great influence on the results of the thermal simulation in the insulated gate bipolar transistor (IGBT) module. Different from the widely used uniform heat source model, a distributed heat source model consisting of a body heat source and two boundary heat sources is proposed in this article, which is based on the ON-state model of the IGBT module. Meanwhile, a novel parameter extraction method is developed only by using I-V characteristics. And the accuracy of the extraction method is verified by comparing the calculated package resistance with the measured package resistance. Finally, the proposed distributed heat source and the traditional uniform heat source under different situations are compared in thermal simulation. The results show that the proposed model can improve the accuracy of thermal simulation results, especially the transient results in a short time, and the model parameters can be easily extracted by the I-V characteristics from the product datasheet, which will help the model be more easily applied in practical applications.
机译:热源的确定对绝缘栅双极晶体管(IGBT)模块中的热模拟结果产生了很大影响。与广泛使用的均匀热源模型不同,本文提出了由体热源和两个边界热源组成的分布式热源模型,其基于IGBT模块的开启状态模型。同时,仅通过使用I-V特性开发了一种新颖的参数提取方法。通过将计算的封装电阻与测量的封装电阻进行比较,验证提取方法的精度。最后,在热模拟中比较了所提出的分布热源和不同情况下的传统均匀热源。结果表明,该模型可以提高热仿真结果的准确性,特别是短时间内的瞬态导致,并且可以通过产品数据表的IV特征轻松提取模型参数,这将有助于更容易地帮助模型应用于实际应用。

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