The FEM analysis of FGM piezoelectric semiconductor problems

Sladek J.; Sladek V.; Lu H. H. -H.; Young D. L.

首页> 外文期刊>Composite Structures >The FEM analysis of FGM piezoelectric semiconductor problems

【24h】

The FEM analysis of FGM piezoelectric semiconductor problems

机译：FGM压电半导体问题的有限元分析

获取原文

获取原文并翻译 | 示例

掌桥外文数据库（机构版） >>

开具论文收录证明 >>

文献代查 >>

页面导航

摘要
著录项
相似文献
相关主题

摘要

The finite element method is developed for 3-D general boundary value problems for a piezoelectric semiconductor with functionally graded material properties. The electron density and electric current are additionally considered in the constitutive equations for piezoelectric semiconductors. A general variation of material properties with Cartesian coordinates is treated in the numerical analyses. The influence of material parameter gradation and initial electron density is investigated in the static case. Numerical results are presented" for a 3-D beam under a static and impact mechanical load. Transversely isotropic material properties are considered in this study. (C) 2016 Elsevier Ltd. All rights reserved.

著录项

来源
《Composite Structures》 |2017年第3期|13-20|共8页
作者
Sladek J.; Sladek V.; Lu H. H. -H.; Young D. L.;
展开▼
作者单位

Slovak Acad Sci, Inst Construct & Architecture, Bratislava 84503, Slovakia;

Slovak Acad Sci, Inst Construct & Architecture, Bratislava 84503, Slovakia;

Natl Taiwan Univ, Dept Civil Engn, Taipei 10617, Taiwan;

Natl Taiwan Univ, Dept Civil Engn, Taipei 10617, Taiwan;

展开▼
收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类
关键词
Finite element method; Functionally graded materials; Piezoelectric semiconductors;

机译：有限元法;功能梯度材料;压电半导体;

相似文献

外文文献
中文文献
专利

1. A FEM model for the active control of curved FGM shells using piezoelectric sensor/actuator layers [J] . X. Q. He, K. M. Liew, T. Y. Ng, International Journal for Numerical Methods in Engineering . 2002,第6期

机译：使用压电传感器/执行器层主动控制弯曲FGM壳体的FEM模型
2. Piezoelectric-conductor iterative method for analysis of cracks in piezoelectric semiconductors via the finite element method [J] . Fan CuiYing, Yan Yang, Xu GuangTao, Engineering Fracture Mechanics . 2016,第Null期

机译：压电导体裂纹的压电-导体迭代有限元分析
3. Analysis of a circular piezoelectric semiconductor embedded in a piezoelectric semiconductor substrate [J] . J. S. Yang, Y. C. Song, A. K. Soh Archive of Applied Mechanics . 2006,第7a8期

机译：嵌入在压电半导体衬底中的圆形压电半导体的分析
4. Stability analysis of a thick piezoelectric FGM plate [C] . K. M. Bajoria, P. Jadhav International Conference on Computational Methods and Experimental Measurements . 2013

机译：厚压电FGM板的稳定性分析
5. Optical, electronic, and piezoelectric properties of nitride semiconductors. [D] . Al-Yacoub, Ahmad M. K. 2002

机译：氮化物半导体的光学，电子和压电特性。
6. Promote locally led initiatives to fight female genital mutilation/cutting (FGM/C) lessons from anti-FGM/C advocates in rural Kenya [O] . Purity Mwendwa, Naomi Mutea, Mary Joy Kaimuri, 2020

机译：促进当地领导的反对切割女性生殖器官/切割生殖器官的倡议来自肯尼亚农村地区反对女性生殖器切割/生殖器切割的倡导者的教训
7. Analysis of quantum-dot-induced strain and electric fields in piezoelectric semiconductors of general anisotropy [O] . Wang C.-Y., Denda M., Pan E. 2006

机译：各向异性压电半导体中量子点诱发的应变和电场的分析

The FEM analysis of FGM piezoelectric semiconductor problems

摘要

著录项

相似文献

相关主题

期刊订阅