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A Technique for Estimating the Probability of Radiation-Stimulated Failures of Integrated Microcircuits in Low-Intensity Radiation Fields: Application to the Spektr-R Spacecraft

机译:低强度辐射场中集成微电路辐射激发故障的概率估计技术:在Spektr-R航天器中的应用

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摘要

In developing radio-electronic devices (RED) of spacecraft operating in the fields of ionizing radiation in space, one of the most important problems is the correct estimation of their radiation tolerance. The "weakest link" in the element base of onboard microelectronic devices under radiation effect is the integrated microcircuits (IMC), especially of large scale (LSI) and very large scale (VLSI) degree of integration. The main characteristic of IMC, which is taken into account when making decisions on using some particular type of IMC in the onboard RED, is the probability of non-failure operation (NFO) at the end of the spacecraft's lifetime. It should be noted that, until now, the NFO has been calculated only from the reliability characteristics, disregarding the radiation effect. This paper presents the so-called "reliability" approach to determination of radiation tolerance of IMC, which allows one to estimate the probability of non-failure operation of various types of IMC with due account of radiation-stimulated dose failures. The described technique is applied to RED onboard the Spektr-R spacecraft to be launched in 2007.
机译:在开发在空间电离辐射领域中运行的航天器的无线电电子设备(RED)时,最重要的问题之一是对其辐射耐受性的正确估计。在辐射作用下,车载微电子设备的元件库中的“最薄弱环节”是集成微电路(IMC),尤其是大规模(LSI)和超大规模(VLSI)集成度。决定在机载RED中使用某种特定类型的IMC时要考虑到的IMC的主要特征是,在航天器寿命结束时发生非故障操作(NFO)的可能性。应该注意的是,到目前为止,不考虑辐射效应,仅根据可靠性特征计算了NFO。本文介绍了一种确定“ IMC”的辐射耐受性的所谓“可靠性”方法,该方法可以通过适当考虑辐射刺激的剂量失败来估算各种类型的IMC的无故障运行概率。所描述的技术适用于将于2007年发射的Spektr-R航天器上的RED。

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