• 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Conference Papers in Science >Effect of ZnO:Al Thickness on the Open Circuit Voltage of Organic/a-Si:H Based Hybrid Solar Cells
【24h】

Effect of ZnO:Al Thickness on the Open Circuit Voltage of Organic/a-Si:H Based Hybrid Solar Cells

机译：ZnO：Al厚度对有机/ a-Si：H基混合太阳能电池开路电压的影响

获取原文
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Hybrid solar cells are based on the concept of using both organic and inorganic materials for fabrication of devices. Hybrid solar cells, based on a heterojunction between inorganic electron acceptor layer and organic donor layer, has been fabricated. Effect of electron transport layer on open circuit voltage (Voc) of hybrid solar cells was investigated. Hybrid solar cells were fabricated using amorphous silicon as main absorbing layer and as electron acceptor layer while using copper phthalocyanine (CuPc) as the donor materials. Al doped ZnO layer was used as buffer layer between ITO and a-Si:H to prevent ITO from reacting with silane gas during plasma enhanced chemical deposition (PECVD) process. ZnO:Al thin film also acts as electron transport layer. The open circuit voltage of hybrid solar cells studied with varying the thickness of ZnO:Al layer.Vocwas increased from 0.30 volt to 0.52 volt with increasing the thickness of ZnO:Al layer from 15 nm to 45 nm. The poor interface between inorganic (a-Si:H) and organic layers may be a possible reason for low fill factor and low photocurrent in hybrid solar cells.
机译：混合太阳能电池基于使用有机和无机材料制造器件的概念。已经基于无机电子受体层和有机施主层之间的异质结制造了混合太阳能电池。研究了电子传输层对混合太阳能电池开路电压（Voc）的影响。使用非晶硅作为主要吸收层和电子受体层，同时使用酞菁铜（CuPc）作为施主材料，制造了混合太阳能电池。铝掺杂的ZnO层用作ITO和a-Si：H之间的缓冲层，以防止ITO在等离子体增强化学沉积（PECVD）过程中与硅烷气体反应。 ZnO：Al薄膜也充当电子传输层。研究了随着ZnO：Al层厚度的变化而变化的混合太阳能电池的开路电压。随着ZnO：Al层厚度从15 nm增大到45 nm，Voc从0.30伏增加到0.52伏。无机（a-Si：H）和有机层之间的不良界面可能是混合太阳能电池中填充系数低和光电流低的可能原因。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号