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ZnO Thin Film Deposition for TCO Application in Solar Cell

机译:用于太阳能电池TCO的ZnO薄膜沉积

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ZnO is a well-known suitable candidate for the Transparent Conducting Oxide (TCO) layer of thin film compound solar cells. In this paper we have discussed the deposition of ZnO thin film on glass substrate by reactive DC magnetron sputtering using oxygen as a reactive gas. Samples are prepared by varying oxygen flow rates during the deposition process. After deposition, samples are annealed at 300°C for 2 hours in vacuum environment. All the properties of the film are measured before and after annealing. All the samples are tested for the optical transparency, band gap, and electrical resistivity before and after annealing. Band gap of film is observed to be 3.2 eV. XRD and SEM measurements of the samples show the variation in the crystal structure and surface morphology of the film with varying oxygen flow rate and annealing also. Around 600 nm thick ZnO film with1.5×10-3 Ω·cm resistivity and 80% transparency without any doping is achieved.
机译:ZnO是薄膜复合太阳能电池的透明导电氧化物(TCO)层的众所周知的合适候选材料。在本文中,我们讨论了使用氧气作为反应性气体的反应性DC磁控溅射在玻璃基板上沉积ZnO薄膜的方法。通过在沉积过程中改变氧气流速来制备样品。沉积后,将样品在真空环境中于300°C退火2小时。在退火之前和之后测量膜的所有性能。测试所有样品的退火前后的光学透明度,带隙和电阻率。膜的带隙为3.2 eV。样品的XRD和SEM测量表明,随着氧气流速的变化和退火,薄膜的晶体结构和表面形态也发生变化。可获得厚度约为600μm的ZnO膜,电阻率为1.5×10-3μΩ·cm,透明性为80%,无任何掺杂。

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