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首页> 外文期刊>Conference Papers in Science >Raman and FTIR Studies on PECVD Grown Ammonia-Free Amorphous Silicon Nitride Thin Films for Solar Cell Applications
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Raman and FTIR Studies on PECVD Grown Ammonia-Free Amorphous Silicon Nitride Thin Films for Solar Cell Applications

机译：用于太阳能电池的PECVD生长的无氨非晶氮化硅薄膜的拉曼光谱和FTIR研究

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Ammonia- (NH3-) free, hydrogenated amorphous silicon nitride (a-SiNx:H) thin films have been deposited using silane (SiH4) and nitrogen (N2) as source gases by plasma-enhanced chemical vapour deposition (PECVD). During the experiment, SiH4flow rate has been kept constant at 5 sccm, whereas N2flow rate has been varied from 2000 to 1600 sccm. The effect of nitrogen flow on SiNx:H films has been verified using Raman analysis studies. Fourier transform Infrared spectroscopy analysis has been carried out to identify all the possible modes of vibrations such as Si–N, Si–H, and N–H present in the films, and the effect of nitrogen flow on these parameters is correlated. The refractive index of the above-mentioned films has been calculated using UV-VIS spectroscopy measurements by Swanepoel’s method.
机译：已经通过等离子体增强化学气相沉积（PECVD）使用硅烷（SiH4）和氮气（N2）作为源气体沉积了无氨（NH3-）的氢化非晶氮化硅（a-SiNx：H）薄膜。在实验过程中，SiH4流量保持恒定在5 sccm，而N2流量在2000到1600 sccm之间变化。氮气流对SiNx：H薄膜的影响已使用拉曼分析研究进行了验证。已经进行了傅里叶变换红外光谱分析，以识别薄膜中存在的所有可能的振动模式，例如Si–N，Si–H和N–H，并且将氮气流对这些参数的影响相关联。上述薄膜的折射率是使用Swanepoel方法通过UV-VIS光谱测量得出的。

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