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首页> 外文期刊>Advances in condensed matter physics >Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study
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Electron Band Alignment at Interfaces of Semiconductors with Insulating Oxides: An Internal Photoemission Study

机译：具有绝缘氧化物的半导体界面上的电子能带对准：内部光发射研究

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Evolution of the electron energy band alignment at interfaces between different semiconductors and wide-gap oxide insulators is examined using the internal photoemission spectroscopy, which is based on observations of optically-induced electron (or hole) transitions across the semiconductor/insulator barrier. Interfaces of various semiconductors ranging from the conventional silicon to the high-mobility Ge-based (Ge,Si1-xGex,Ge1-xSnx) andAIIIBVgroup (GaAs,InxGa1-xAs, InAs, GaP, InP, GaSb, InSb) materials were studied revealing several general trends in the evolution of band offsets. It is found that in the oxides of metals with cation radii larger than≈0.7 Å, the oxide valence band top remains nearly at the same energy (±0.2 eV) irrespective of the cation sort. Using this result, it becomes possible to predict the interface band alignment between oxides and semiconductors as well as between dissimilar insulating oxides on the basis of the oxide bandgap width which are also affected by crystallization. By contrast, oxides of light elements, for example, Be, Mg, Al, Si, and Sc exhibit significant shifts of the valence band top. General trends in band lineup variations caused by a change in the composition of semiconductor photoemission material are also revealed.
机译：使用内部光发射光谱法检查不同半导体与宽间隙氧化物绝缘体之间的界面处的电子能带取向的演变，该光谱基于对穿过半导体/绝缘体势垒的光感应电子（或空穴）跃迁的观察。研究了从常规硅到高迁移率Ge基（Ge，Si1-xGex，Ge1-xSnx）和AIIIBVgroup（GaAs，InxGa1-xAs，InAs，GaP，InP，GaSb，InSb）材料的各种半导体的界面频带偏移发展中的几个一般趋势。结果发现，在阳离子半径大于≈0.7Å的金属的氧化物中，不管阳离子的种类如何，其价带的顶部几乎保持相同的能量（±0.2 eV）。利用该结果，可以基于也受结晶影响的氧化物带隙宽度，预测氧化物与半导体之间以及异种绝缘氧化物之间的界面带取向。相反，轻元素例如Be，Mg，Al，Si和Sc的氧化物表现出价带顶部的明显偏移。还揭示了由半导体光发射材料的成分变化引起的能带阵容变化的一般趋势。

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