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首页> 外文期刊>Advances in condensed matter physics >Analysis of Low Dimensional Nanoscaled Inversion-Mode InGaAs MOSFETs for Next-Generation Electrical and Photonic Applications
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Analysis of Low Dimensional Nanoscaled Inversion-Mode InGaAs MOSFETs for Next-Generation Electrical and Photonic Applications

机译：用于下一代电子和光子应用的低尺寸纳米级反转模式InGaAs MOSFET的分析

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The electrical characteristics of In0.53Ga0.47As MOSFET grown with Si interface passivation layer (IPL) and highkgate oxide HfO2layer have been investigated in detail. The influences of Si IPL thickness, gate oxide HfO2thickness, the doping depth, and concentration of source and drain layer on output and transfer characteristics of the MOSFET at fixed gate or drain voltages have been individually simulated and analyzed. The determination of the above parameters is suggested based on their effect on maximum drain current, leakage current, saturated voltage, and so forth. It is found that the channel length decreases with the increase of the maximum drain current and leakage current simultaneously. Short channel effects start to appear when the channel length is less than 0.9 μm and experience sudden sharp increases which make device performance degrade and reach their operating limits when the channel length is further lessened down to 0.5 μm. The results demonstrate the usefulness of short channel simulations for designs and optimization of next-generation electrical and photonic devices.
机译：详细研究了用硅界面钝化层（IPL）和高钾氧化物HfO2层生长的In0.53Ga0.47As MOSFET的电学特性。分别模拟和分析了Si IPL厚度，栅极氧化物HfO2厚度，掺杂深度以及源极和漏极层浓度对在固定栅极或漏极电压下MOSFET的输出和传输特性的影响。建议根据上述参数对最大漏极电流，泄漏电流，饱和电压等的影响来确定这些参数。发现沟道长度随着最大漏极电流和泄漏电流的增加而减小。当通道长度小于0.9μm时，开始出现短通道效应，并且突然急剧增加，这会导致器件性能下降，并在通道长度进一步减小至0.5μm时达到其工作极限。结果表明，短通道仿真对于下一代电气和光子器件的设计和优化非常有用。

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