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首页> 外文期刊>ACS Omega >Performance Enhancement of Planar Heterojunction Perovskite Solar Cells through Tuning the Doping Properties of Hole-Transporting Materials
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Performance Enhancement of Planar Heterojunction Perovskite Solar Cells through Tuning the Doping Properties of Hole-Transporting Materials

机译：通过调整空穴传输材料的掺杂特性来增强平面异质结钙钛矿太阳能电池的性能

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Chemical doping has been widely used to finely tune the electrical properties of organic hole-transporting materials (HTMs) that find widespread applications in perovskite solar cells (PSCs). Here, to shed light on the precise role of chemical p-doping in affecting the charge-transport properties of HTMs and photovoltaic performance of PSCs, two kinds of representative dopants, including lithium bis(trifluoromethane)sulfonimide (LiTFSI) and two Co(III) complexes tris[2-(1H -pyrazol-1-yl)-4-tert -butylpyridine]cobalt(III)tris[bis(trifluoromethylsulfonyl)imide] (FK209) and tris[2-(1H -pyrazol-1-yl)pyridine]cobalt(III)tris[bis(trifluoromethylsulfonyl)imide] (FK102), are employed as the p-type dopant models to dope the 2,2′,7,7′-tetrakis[N ,N -di-p -methoxyphenylamine]-9,9′-spirobifluorene (spiro-OMeTAD) HTM. Both dopants can facilitate the generation of oxidized spiro-OMeTAD radical cation and improve hole mobility. Co-doping of FK209 and LiTFSI is necessary to achieve an optimal doping property and best device performance with power conversion efficiency of 17.8% compared to that of the FK209-doped device (13.5%) and the LiTFSI-doped device (15%). UV–vis absorption, space-charge-limited current measurements, and steady-state and time-resolved photoluminescence measurements have confirmed that with the co-doping of the two kinds of p-dopants in a proper ratio the doped spiro-OMeTAD exhibits a high charge carrier mobility and charge carrier transfer/collection capability.
机译：化学掺杂已广泛用于微调在钙钛矿太阳能电池（PSC）中得到广泛应用的有机空穴传输材料（HTM）的电性能。在这里，为了阐明化学p掺杂在影响HTM的电荷传输性能和PSC的光伏性能中的确切作用，使用了两种代表性的掺杂剂，包括双（三氟甲烷）磺酰亚胺锂（LiTFSI）和两种Co（III）。 ）配合物tris [2-（1H-吡唑-1-基）-4-叔叔丁基吡啶]钴（III）tris [双（三氟甲基磺酰基）酰亚胺]（FK209）和tris [2-（ 1 H-吡唑-1-基）吡啶]钴（III）三[双（三氟甲基磺酰基）酰亚胺]（FK102）被用作p型掺杂剂模型来掺杂2,2'，7,7 ′-四[[N，N，N-二-对-甲氧基苯胺] -9，9′-螺二芴（spiro-OMeTAD）HTM。两种掺杂剂均可以促进氧化的螺-OMeTAD自由基阳离子的产生并改善空穴迁移率。与掺杂FK209的器件（13.5％）和掺杂LiTFSI的器件（15％）相比，FK209和LiTFSI的共掺杂是获得最佳掺杂性能和最佳器件性能所必需的，其功率转换效率为17.8％。紫外可见吸收，空间电荷限制电流测量以及稳态和时间分辨的光致发光测量已证实，以适当的比例共掺杂两种p型掺杂剂时，掺杂的螺-OMeTAD表现出高电荷载流子迁移率和电荷载流子传输/收集能力。

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