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首页> 外文期刊>Advances in Science, Technology and Engineering Systems >Material, Structural Optimization and Analysis of Visible-Range Back-Illuminated OPFET photodetector
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Material, Structural Optimization and Analysis of Visible-Range Back-Illuminated OPFET photodetector

机译：可见范围背照式OPFET光电探测器的材料，结构优化和分析

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摘要

High gain-bandwidth product and visible/UV contrast photodetectors are vital in Visible Light Communication (VLC) and Ultraviolet (UV) reflectance imaging applications respectively. We adopt material and structural optimization to perceive such photodetectors with back-illuminated Optical Field Effect Transistor (OPFET) wherein any potential difference in absorption coefficient of the semiconductor material between the visible and the UV range (higher in the UV region) can be explored at its full potential. The results have been analyzed using the photoconductive and the photovoltaic effects, the series resistance effects, scaling rules- induced effects, and channel length-variation effects. We consider the three most prominent and functional materials in the visible range (Si, GaAs, and InP) for material-based optimization. Structural optimization is performed employing a range of medium gate lengths. The gate electrodes utilized are Indium-Tin-Oxide (ITO) for Si and GaAs with high Schottky barrier heights of ~0.71 eV and ~0.98 eV respectively whereas the Schottky contact on InP is gold (Au) with a high barrier height of ~0.8 eV. The operating visible and UV wavelengths are 600 nm and 350 nm respectively. The results suggest that GaAs OPFET has wide bandwidth potential in the gigahertz range apart from its high sensitivity and visible/UV contrast features. The InP-based OPFET exhibits high sensitivity and sub-gigahertz frequency response; and can compete or surpass the GaAs OPFET in terms of the visible/UV contrast ratio. The Si OPFET shows bandwidth in the megahertz range along with high sensitivity but exhibits low contrast ratio. The structural parameters have a significant effect on the detector response. The results are in-line with the experiments. This paper reflects the performance of the investigated detectors towards the said applications through optimization and the associated analysis represents the dependence of the obtained response on the device material and structural parameters, thus, opening the door for further research.
机译：高增益带宽乘积和可见/紫外对比光电探测器分别在可见光通信（VLC）和紫外（UV）反射成像应用中至关重要。我们采用材料和结构优化技术来感知此类具有背照式光场效应晶体管（OPFET）的光电探测器，其中可以在可见光和UV范围（在UV区域较高）之间探索半导体材料吸收系数的任何电势差。它的全部潜力。使用光电导效应，光伏效应，串联电阻效应，比例尺诱导的效应和沟道长度变化效应对结果进行了分析。我们考虑了可见范围内的三种最突出和功能最强的材料（Si，GaAs和InP），用于基于材料的优化。采用一系列中等浇口长度进行结构优化。所用的栅电极是用于Si和GaAs的铟锡氧化物（ITO），肖特基势垒高度分别约为0.71 eV和〜0.98 eV，而InP上的肖特基触点是金（Au），势垒高度约为〜0.8。 eV。工作可见光波长和紫外线波长分别为600 nm和350 nm。结果表明，GaAs OPFET除具有高灵敏度和可见/ UV对比功能外，还具有在千兆赫兹范围内的宽带宽潜力。基于InP的OPFET具有高灵敏度和亚千兆赫兹频率响应;并且在可见光/紫外线对比度方面可以竞争或超越GaAs OPFET。 Si OPFET显示出兆赫兹范围内的带宽以及高灵敏度，但显示出低对比度。结构参数对检测器响应有重大影响。结果与实验一致。本文通过优化反映了针对上述应用而研究的探测器的性能，相关的分析代表了所获得响应对设备材料和结构参数的依赖性，从而为进一步的研究打开了大门。

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