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Variation of blocking temperatures for exchange biased CoO/Co/Ge(100) films

机译：交换偏压CoO / Co / Ge（100）膜的阻挡温度变化

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Variations of the blocking temperature and related structures for CoO/Co/Ge(100) films are investigated by employing reflection high energy electron diffraction,Auger electron spectroscopy, and surface magneto-optic Kerr effect measurements. By increasing the CoO thickness, the blocking temperature is smaller than the Neel temperature of CoO. The monotonous increase of the blocking temperature is mainly attributed to the increasing thermal stability of the antiferromagnetic grains by way of increasing the antiferromagnetic thickness. The deviation of the blocking temperature from the linear relation and the full widths at half maximum of the diffraction spots show a similar trend. The minimums appear around 25 monolayer of CoO and are related to the formation of larger grains.
机译：通过反射高能电子衍射，俄歇电子能谱和表面磁光克尔效应测量，研究了CoO / Co / Ge（100）薄膜的阻挡温度和相关结构的变化。通过增加CoO的厚度，结块温度小于CoO的Neel温度。阻挡温度的单调升高主要归因于通过增加反铁磁厚度来增加反铁磁晶粒的热稳定性。阻挡温度与线性关系的偏离以及衍射点的半峰全宽显示出相似的趋势。最小值出现在CoO的25个单层附近，并且与较大晶粒的形成有关。

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