Influence of the Doping Rate of the CIGSe Layer on the Recombination-generation Mechanisms with 25 nm Incorporation of a KF Layer on a CIGSe Solar Cell

Djimba Niane; Alain K. Ehemba; Salif Cissé; Ousmane Diagne; Moustapha Dieng

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Influence of the Doping Rate of the CIGSe Layer on the Recombination-generation Mechanisms with 25 nm Incorporation of a KF Layer on a CIGSe Solar Cell

机译：CIGSe层的掺杂速率对在CIGSe太阳能电池上掺入25 nm KF层的复合生成机理的影响

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In this work, we studied the influence of the doping rate of the CIGSe layer on the recombination-generation mechanisms with 25 nm incorporation of a KF layer on a CIGSe solar cell. The different doping taken are Nb=1015cm-3, Nb=1016cm-3 et Nb=1017cm-3. Numerical modeling with the SCAPS-1D software shows that the generation rate varies slightly while that of recombination is very important, explained by a strong presence of traps in the CIGSe bandgap.

机译：在这项工作中，我们研究了CIGSe层的掺杂速率对在CIGSe太阳能电池上掺入25 nm KF层的复合生成机理的影响。采取的不同掺杂是Nb = 1015cm-3，Nb = 1016cm-3和Nb = 1017cm-3。用SCAPS-1D软件进行的数值建模表明，生成速率略有变化，而重组的生成速率则非常重要，这可以通过CIGSe带隙中大量存在的陷阱来解释。

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《American Journal of Energy Research》 |2018年第1期|共5页
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Djimba Niane; Alain K. Ehemba; Salif Cissé; Ousmane Diagne; Moustapha Dieng;
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3. Electrical characterization of CIGSe solar cells metastability with Zn(S,O,OH)-ZnMgO interface buffer layers [J] . Serhan J., Djebbour Z., Darga A., Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion . 2010,第11期

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Influence of the Doping Rate of the CIGSe Layer on the Recombination-generation Mechanisms with 25 nm Incorporation of a KF Layer on a CIGSe Solar Cell

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