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首页> 外文期刊>Applied Nanoscience >Preparation and characterization of aluminum oxide nanoparticles by laser ablation in liquid as passivating and anti-reflection coating for silicon photodiodes
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Preparation and characterization of aluminum oxide nanoparticles by laser ablation in liquid as passivating and anti-reflection coating for silicon photodiodes

机译：液体中激光烧蚀作为硅光电二极管钝化和减反射涂层的氧化铝纳米粒子的制备与表征

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In this study, we have prepared aluminum oxide (Al2O3 nanoparticles) NPs with size ranging from 50 to 90?nm by laser ablation of aluminum target in ethanol. The effect of laser fluence on the structural, morphological and optical properties of Al2O3 was demonstrated and discussed. X-ray diffraction XRD results confirm that the synthesized Al2O3 NPs are crystalline in nature. The sample prepared at 3.5?J/cm2/pulse exhibits single phase of γ-Al2O3, while the XRD patterns of the nanoparticles synthesized at 5.3 and 7.5?J/cm2/pulse show the co-existence of the α-Al2O3 and γ-Al2O3 phases. Nanostructured Al2O3 films have been used as anti-reflecting coating and surface passivation layer to improve the photoresponse characteristics of silicon photodiode. The experimental data showed that the optical energy gap decreases from 5.3 to 5?eV as the laser fluence increases from 3.5 to 7.3?J/cm2. The lowest optical reflectivity was found for silicon photodiode deposited with a single layer of Al2O3 prepared at 3.5?J/cm2/pulse. The effect of laser fluence on the refractive index and extinction coefficient of the nanostructured Al2O3 film was studied. The photosensitivity of the silicon photodiode increased from 0.4 to 1.4?AW?1 at 800?nm after depositing Al2O3 prepared at 3.5?J/cm2/pulse, followed by rapid thermal annealing at 400?°C for 60?s.
机译：在这项研究中，我们通过激光烧蚀乙醇中的铝靶制备了尺寸为50至90？nm的氧化铝（Al 2 O 3 纳米颗粒）NP。演示并讨论了激光能量密度对Al 2 O 3 的结构，形貌和光学性质的影响。 X射线衍射X射线衍射结果证实合成的Al 2 O 3 NPs本质上是晶体。以3.5？J / cm 2 / pulse制备的样品表现出γ-Al 2 O 3 的单相，而X射线衍射图以5.3和7.5？J / cm 2 / pulse合成的纳米粒子显示α-Al 2 O 3 和γ-Al共存Al 2 O 3 相。纳米结构的Al 2 O 3 薄膜已被用作抗反射涂层和表面钝化层，以改善硅光电二极管的光响应特性。实验数据表明，随着激光能量密度从3.5增加到7.3？J / cm 2 ，光能隙从5.3减小到5？eV。发现以3.5？J / cm 2 / pulse制备的单层Al 2 O 3 沉积的硅光电二极管的最低光学反射率。研究了激光注量对纳米结构Al 2 O 3 薄膜折射率和消光系数的影响。沉积在3.5？的Al 2 O 3 沉积后，硅光电二极管在800？nm处的光敏度从0.4增加到1.4？AW ？1 。 J / cm 2 / pulse，然后在400？C下快速热退火60？s。

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