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首页> 外文期刊>Applied Nanoscience >Electrical investigation of TiO2 thin films coated on glass and silicon substrates—effect of UV and visible light illumination
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Electrical investigation of TiO2 thin films coated on glass and silicon substrates—effect of UV and visible light illumination

机译：玻璃和硅基底上涂覆的TiO2薄膜的电学研究-紫外线和可见光照明的影响

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摘要

The conducting nature of nanocrystalline TiO2 thin film coated on glass and silicon (Si) substrates was studied in detail. The films were prepared through sol–gel spin-coating method with variation in coating parameters viz, the thickness of the film and the post annealing temperature. The thickness of the films was measured using Stylus profilometer. The resistivity of the film, as a function of film thickness, under the illumination of UV, visible light, and dark conditions was found using the four-probe method. The results show that the resistivity of the film decreases with increase in thickness of the film. The decrease in resistivity of the film is attributed to increase in cross-sectional area and rearrangement and removal of defects. Illumination of the samples under visible and UV light further decreases the resistivity of the film. The electrical resistivity of TiO2 film coated on Si substrate was observed to be lesser than that of the glass substrate.
机译：详细研究了涂覆在玻璃和硅（Si）衬底上的纳米晶TiO 2 薄膜的导电特性。薄膜是通过溶胶-凝胶旋涂法制备的，涂层参数不同，即薄膜的厚度和后退火温度不同。使用触针轮廓仪测量膜的厚度。使用四探针法发现了在紫外线，可见光和黑暗条件下，膜的电阻率与膜厚度的关系。结果表明，随着膜厚度的增加，膜的电阻率降低。膜电阻率的降低归因于横截面积的增加以及缺陷的重新排列和去除。在可见光和紫外光下照射样品会进一步降低薄膜的电阻率。观察到涂覆在Si衬底上的TiO 2 膜的电阻率小于玻璃衬底的电阻率。

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