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首页> 外文期刊>International Journal of Electrochemical Science >Enhanced Interfacial Properties of Electrochemically Deposited ZnO Nano Structured Electrode
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Enhanced Interfacial Properties of Electrochemically Deposited ZnO Nano Structured Electrode

机译：电化学沉积的ZnO纳米结构电极的界面性能增强

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The electronic properties at the transparent conducting oxide (TCO)/ semiconductor interface are crucial in optimizing the efficiency of light harvesting and storage devices. The back scattered current and surface defects of ZnO nanorods at interface limit the commercial level fabrication of device structures with this material system. Herein, a cost effective and scalable electro-nanofabrication technique has been utilized for the growth of ZnO nanorods over seeded TCO substrates. The electrochemical conditions for controlling ZnO nano rod morphology over the ZnO self-seeded transparent conducting oxide coated glass substrate are comprehensively investigated. The results show that the seed layer thickness, annealing environment for seeding and growth as well as processing temperatures are critical in optimizing the electronic properties at the interface. By controlling these parameters the back scattering current has been reduced to record minimum of 10-7 A and the interfacial resistance has been minimized to 30 Ω. Photoluminescence spectroscopy and the Electrochemical Impedance spectroscopy are effectively used in this study for defect center analysis and interfacial characterization.
机译：透明导电氧化物（TCO）/半导体界面处的电子特性对于优化光收集和存储设备的效率至关重要。 ZnO纳米棒在界面处的背向散射电流和表面缺陷限制了使用该材料系统的器件结构的商业化制造。在本文中，已经将具有成本效益且可扩展的电纳米加工技术用于在种子TCO衬底上生长ZnO纳米棒。全面研究了控制ZnO自种透明导电氧化物涂层玻璃基板上ZnO纳米棒形貌的电化学条件。结果表明，种子层厚度，用于种子生长的退火环境以及工艺温度对于优化界面的电子性能至关重要。通过控制这些参数，反向散射电流已减小至记录的最小值10-7 A，并且界面电阻已最小化至30Ω。光致发光光谱法和电化学阻抗光谱法在本研究中有效地用于缺陷中心分析和界面表征。

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