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首页> 外文期刊>International Journal of Electrochemical Science >Chemical Deposition of ITO/CdS/PbS/C for Low Voltage Photosensor Applications
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Chemical Deposition of ITO/CdS/PbS/C for Low Voltage Photosensor Applications

机译：用于低压光电传感器应用的ITO / CdS / PbS / C的化学沉积

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In this work we report the assembling and electrical characterization of ITO/CdS/PbS/C heterostructured photosensor. The assembling of the photosensor was done completely by solution processing, employing the chemical bath deposition (CBD) technique to deposit both semiconductor layers in the device, CdS and PbS. ITO-coated glass was used as substrate and graphite ink electrodes as back contacts. The electrical output response of the photodevices was analyzed in dark and under illumination at different intensities. Its sensitivity was examined working as photodiode at zero volts. The results showed the rectifying character of the heterostructure and light sensitivity with linear photoresponse under illumination. The measured photoresponsivity of the photosensor was 1.22 A/W, which is around 50 % of an ideal characteristic of a sensor for a given spectral range.
机译：在这项工作中，我们报告了ITO / CdS / PbS / C异质结构光电传感器的组装和电学特性。光电传感器的组装完全通过溶液处理来完成，采用化学浴沉积（CBD）技术在器件中同时沉积CdS和PbS的两个半导体层。涂有ITO的玻璃用作衬底，石墨墨水电极用作背触点。在黑暗中和在不同强度的光照下分析了光电器件的电输出响应。其灵敏度在零伏下作为光电二极管工作。结果表明，在光照条件下，线性光响应的异质结构和光敏性的整流特性。光电传感器的测得光响应率为1.22 A / W，约为给定光谱范围内传感器理想特性的50％。

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