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首页> 外文期刊>International Journal of Electrochemical Science >Dependence of Copper Concentration on the Properties of Cu2ZnSnS4 Thin Films Prepared by Electrochemical Method
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Dependence of Copper Concentration on the Properties of Cu2ZnSnS4 Thin Films Prepared by Electrochemical Method

机译：铜浓度对电化学法制备Cu 2 ZnSnS 4 薄膜性能的影响

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Quaternary Cu2ZnSnS4 (CZTS) thin films were fabricated as solar cell absorber layers via sequentialelectrodeposition method using a flexible copper plate as substrate. The CZTS thin films were grownwith different copper salt concentrations and sulfurized in elemental sulfur vapor. The morphological,structural, compositional, and electrical properties of the films were investigated using X-raydiffraction, scanning electron microscopy, and energy dispersive X-ray spectroscopy, as well as byRaman scattering and Hall effect measurements. The results showed that the CZTS properties dependon the copper concentration in the precursor. The XRD patterns of the precursor showed the preferredorientation of the (112), (220), and (312) phases. The thin film showed a p-type conductivity, with a16 17 carrier concentration between 9.56 10 cm and 3.66 10 cm , depending on the compositionof the precursor mixture.
机译：通过使用柔性铜板作为衬底的顺序电沉积方法，将第四季Cu2ZnSnS4（CZTS）薄膜制成太阳能电池吸收层。用不同的铜盐浓度生长CZTS薄膜，并在元素硫蒸气中硫化。使用X射线衍射，扫描电子显微镜和能量色散X射线光谱以及拉曼散射和霍尔效应测量研究了膜的形态，结构，组成和电学性质。结果表明，CZTS性能取决于前体中的铜浓度。前体的XRD图谱显示（112），（220）和（312）相的优选取向。薄膜表现出p型导电性，其16 17载流子浓度在9.56 10 cm和3.66 10 cm之间，具体取决于前体混合物的组成。

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