Development of Micro-Pores Including Nano-Pores on n-Si (100) Coated with Sparse Ag Under Dark Etching in 1.0 M NH4F Containing 5.0 M H<sub>2</sub>O<sub>2</sub>

J. C. Lin; C. L. Chuang; C. C. Lin; G. Lerondel

首页> 外文期刊>International Journal of Electrochemical Science >Development of Micro-Pores Including Nano-Pores on n-Si (100) Coated with Sparse Ag Under Dark Etching in 1.0 M NH4F Containing 5.0 M H₂O₂

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Development of Micro-Pores Including Nano-Pores on n-Si (100) Coated with Sparse Ag Under Dark Etching in 1.0 M NH4F Containing 5.0 M H₂O₂

机译：在含5.0 M H _{2 O _{2 的1.0 M NH4F中黑暗刻蚀下在稀有银覆盖的n-Si（100）上形成包括纳米孔在内的微孔}}

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Specimens of n-type single crystalline silicon sparsely deposited with silver nano-particles on the Si(100) surfaces were put in 1.0 M NH4F + 5.0 M H2O2 to investigate their dark etching. Throughexamination by scanning electron microscopy (SEM), the morphology on the n-Si (100) surface etchedfor 1 h revealed a sparse distribution of nano-pores (10~40 nm in diameter) according to the locationsof Ag-particles; however, it exhibited porous surface consisting of micro-pores (1.5~3.1m in diameterwith 15~20m in depth) where nano-pores (100~150 nm in diameter) were embedded inside for theetching duration prolonged for 5 h. The Nyquist plot for this system indicated two typical semicircles,in which the one in response to high frequencies revealed greater diameter and the other in response tolow frequencies indicated smaller diameter. By checking the chemical bonding of silicon and silica inthe NH4F/H2O2 system shows two important points at 99.3 eV and 103.4 eV.

机译：将稀疏地在银纳米颗粒上沉积在Si（100）表面上的n型单晶硅的样品放入1.0 M NH4F + 5.0 M H2O2中，以研究其暗蚀刻。通过扫描电子显微镜（SEM）检查，刻蚀1 h的n-Si（100）表面的形貌显示，根据Ag颗粒的位置，纳米孔（直径为10〜40 nm）的分布稀疏。然而，它呈现出由微孔（直径为1.5〜3.1m，深度为15〜20m）组成的多孔表面，其中纳米孔（直径为100〜150 nm）嵌入其中，腐蚀时间延长了5 h。该系统的奈奎斯特图显示了两个典型的半圆，其中一个响应高频显示较大的直径，另一个响应低频显示较小的直径。通过检查NH4F / H2O2系统中硅和二氧化硅的化学键，在99.3 eV和103.4 eV处显示两个重要点。

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《International Journal of Electrochemical Science》 |2012年第8期|共13页
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J. C. Lin; C. L. Chuang; C. C. Lin; G. Lerondel;
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1. On Wet Etching of n-Si (100) Coated with Sparse Ag-Particles in Aqueous NH₄F with the Aid of H₂O₂ [J] . C. L. Chuang, J. C. Lin, K. H. Chao, International Journal of Electrochemical Science . 2012,第4期

机译：H _{2 O _{2 辅助在NH _{4 F水溶液中湿法涂覆稀有Ag颗粒的n-Si（100）的刻蚀}}}
2. On Wet Etching of n-Si (100) Coated with Sparse Ag-Particles in Aqueous NH₄F with the Aid of H₂O₂ [J] . C. L. Chuang, J. C. Lin, K. H. Chao, International Journal of Electrochemical Science . 2012,第4期

机译：H _{2 O _{2 辅助在NH _{4 F水溶液中湿法涂覆稀有Ag颗粒的n-Si（100）的刻蚀}}}
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Development of Micro-Pores Including Nano-Pores on n-Si (100) Coated with Sparse Ag Under Dark Etching in 1.0 M NH4F Containing 5.0 M H2O2

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Development of Micro-Pores Including Nano-Pores on n-Si (100) Coated with Sparse Ag Under Dark Etching in 1.0 M NH4F Containing 5.0 M H₂O₂