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首页> 外文期刊>International Journal of Electrochemical Science >One-step Hydrothermal Synthesis of Sn-doped OMS-2 and Their Electrochemical Performance
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One-step Hydrothermal Synthesis of Sn-doped OMS-2 and Their Electrochemical Performance

机译：一步一步水热合成Sn掺杂OMS-2及其电化学性能

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摘要

Different amount of Sn doped manganese oxide octahedral molecular sieve (OMS-2) were synthesizedby one-step hydrothermal method using SnCl4, MnSO4 and KMnO4 as raw materials. The Sn-OMS-2materials were characterized by X-ray diffraction (XRD), Raman spectra, Uv-vis spectra, scanningelectron microscopy (SEM), energy dispersive X-ray analysis (EDX), transmission electronmicroscopy (TEM) and surface area analysis. The XRD, Raman and UV-Vis analysis confirm thecryptomelane-Q type of MnO2 crystal structure and no extra peaks related to tin metal or impuritieswere observed. SEM and TEM images show the nanorod morphology of the materials. EDX resultproves that Sn has been successfully doped into the OMS-2 structure. The supercapacitiveperformances of Sn-OMS-2 materials were tested using cyclic voltammetry (CV) and galvanostaticacharge-discharge techniques in 1M Na2SO4 electrolyte under different scan rate. Improvement incapacitance of the OMS-2 materials is observed after doping with Sn, and increased with the Sn dopantrise, of which 15%Sn-OMS-2 sample exhibited the best supercapacitive property (187 F/g).
机译：以SnCl4，MnSO4和KMnO4为原料，通过一步水热法合成了不同数量的Sn掺杂八氧化锰八面体分子筛（OMS-2）。通过X射线衍射（XRD），拉曼光谱，紫外可见光谱，扫描电子显微镜（SEM），能量色散X射线分析（EDX），透射电子显微镜（TEM）和表面积分析对Sn-OMS-2材料进行了表征。 XRD，拉曼和UV-Vis分析证实了隐cryptQ型的MnO2晶体结构，未观察到与锡金属或杂质有关的额外峰。 SEM和TEM图像显示了材料的纳米棒形态。 EDX结果证明Sn已成功掺杂到OMS-2结构中。采用循环伏安法（CV）和恒静电充放电技术，在不同扫描速率下，在1M Na2SO4电解质中测试了Sn-OMS-2材料的超电容性能。掺杂锡后，OMS-2材料的改善能力丧失，随锡掺杂量的增加而提高，其中15％Sn-OMS-2样品表现出最佳的超电容性能（187 F / g）。

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