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首页> 外文期刊>International Journal of Electrochemical Science >High Curie Temperature for La5/8Sr3/8MnO3 Thin Films Prepared by Pulsed Laser Deposition on Glass Substrates
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High Curie Temperature for La5/8Sr3/8MnO3 Thin Films Prepared by Pulsed Laser Deposition on Glass Substrates

机译：通过玻璃衬底上脉冲激光沉积制备的La 5/8 Sr 3/8 MnO 3 薄膜的居里温度高

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摘要

The manganite LSMO films were successfully grown on glass substrates without any additional bufferlayer by pulsed laser deposition. The films have been investigated by X-ray diffraction (XRD), fieldemission-scanning electron microscope (FE-SEM), electrical and magnetic measurements. From theXRD pattern the film is found to be polycrystalline single-phase character. The LSMO thin filmsgrowth on glass substrate, follows the island growth model with average grain size of 44.46nm. Themetal-insulator transition (TMI) temperature was above room temperature and electrical conductionmechanism of LSMO films below phase transition temperature (TP) is due to the electron-electron(major) and electron-magnon scattering processes. The Curie temperature of LSMO films is around352 K, which is one of the high TC in all LSMO films and as our knowledge, is the highest value thatis reported in literature for low cost amorphous substrates such as glass. The low resistivity, high TMIand high TC makes these LSMO films very useful for room temperature magnetic devices.
机译：通过脉冲激光沉积，在没有任何额外缓冲层的情况下成功地将锰矿LSMO膜生长在玻璃基板上。通过X射线衍射（XRD），场发射扫描电子显微镜（FE-SEM），电学和磁学测量研究了这些膜。根据XRD图，发现该膜具有多晶单相特性。 LSMO薄膜在玻璃基板上生长，遵循岛生长模型，平均晶粒尺寸为44.46nm。金属-绝缘体转变（TMI）温度高于室温，而LSMO膜低于相变温度（TP）的导电机理是由于电子-电子（主要）和电子-磁子散射过程所致。 LSMO薄膜的居里温度约为352 K，这是所有LSMO薄膜中的最高TC之一，据我们所知，这是文献中报道的低成本非晶态基底（如玻璃）的最高值。低电阻率，高TMI和高TC使得这些LSMO膜对于室温磁性器件非常有用。

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