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首页> 外文期刊>International Journal of Electrochemical Science >Polythiopene sodium poly [2-(3-thienyl)-ethoxy-4-buthylsulfonate] Inkjet Printed Film-Sensitized ZnO Nanorods Solar Cells
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Polythiopene sodium poly [2-(3-thienyl)-ethoxy-4-buthylsulfonate] Inkjet Printed Film-Sensitized ZnO Nanorods Solar Cells

机译：聚噻吩聚[2-（3-噻吩基）-乙氧基-4-丁基磺酸钠]喷墨印刷薄膜敏化的ZnO纳米棒太阳能电池

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This paper reports the study of the sensitizing effect and the structure of the water soluble polymericdye of polythiopene sodium poly [2-(3-thienyl)-ethoxy-4-buthylsulfonate] (PTEBS) ink-jet thin filmon the performance of the dye sensitized solar cells (DSSC) based-ZnO nanorods (ZNRs). DSSCdevice with sandwich structure of FTO/ZNRs/PTEBS/electrolyte/ Pt was prepared in this study with- -3 the electrolyte used was I /I redox couple. The PTEBS thin film was deposited onto the ZNRs-coatedFTO substrate via an inkjet printing technique from the aqueous solution. To obtain a variation in thethin film structure, the PTEBS was grown via a multiple-step printing approach, namely from three toup to seven times. It was found that the PTEBS ink-jet printed film exhibit effective sensitizing effecton the DSSC by giving enhanced photovoltaic performance of multiple higher order (approximately 3times) compared to a controlled device, the device without PTEBS and its structure was found toinfluence the charge transfer process in the device. A high performance DSSC device can be obtainedfrom the PTEBS film with highly compact and even structure that prepared by three time printing2 process, which gives performance of Jsc, Voc and FF as high as 0.96 mA/cm , 0.42 V and 34%,respectively, which is corresponding to power conversion efficiency (PCE) as high as 0.14%.
机译：本文报道了聚噻吩聚[2-（3-噻吩基）-乙氧基-4-丁磺酸磺酸钠]（PTEBS）喷墨薄膜对染料敏化性能的敏化作用及其结构的研究。太阳能电池（DSSC）为基础的ZnO纳米棒（ZNR）。在这项研究中，制备了具有FTO / ZNRs / PTEBS /电解质/ Pt夹层结构的DSSC器件，其中--3的电解质为I / I氧化还原对。通过喷墨印刷技术从水溶液中将PTEBS薄膜沉积到ZNRs涂层的FTO基板上。为了获得薄膜结构的变化，通过多步印刷方法使PTEBS生长，即从三遍到七遍。结果发现，与受控装置相比，PTEBS喷墨印刷膜通过提供多个更高阶（约3倍）的增强光伏性能，对DSSC表现出有效的敏化效果，发现该装置不具有PTEBS及其结构会影响电荷转移过程在设备中。通过三遍印刷2工艺制备的结构紧凑，结构均匀的PTEBS薄膜可以获得高性能的DSSC器件，其Jsc，Voc和FF的性能分别高达0.96 mA / cm，0.42 V和34％。这对应于高达0.14％的功率转换效率（PCE）。

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