首页> 外文期刊>International Journal of Electrochemical Science >Determination of Trace Amounts of Boron in Polysilicon by Differential Pulse Voltammetry After Hydrofluoric Acid/Nitric Acid Treatment
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Determination of Trace Amounts of Boron in Polysilicon by Differential Pulse Voltammetry After Hydrofluoric Acid/Nitric Acid Treatment

机译:氢氟酸/硝酸处理后的差动脉冲伏安法测定多晶硅中的痕量硼

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A voltammetric method for the determination of trace amounts of boron in polysilicon is proposed.The effects of several chemicals and instrumental variables were studied, and optimized operatingconditions were identified. First, the sample was treated with nitric acid (HNO3)/ hydrofluoric acid(HF) as to vaporize the silicon and stabilize boron. Thereafter, the residue boron was determined bydifferential pulse voltammetry, according to the monitoring the anodic peak of the complex formedbetween boron and Alizarin Red S (ARS) at -460 mV in ammonium acetate buffer (pH=6.5). Based onthe above method, a calibration curve was established by plotting the peak current of the boron-ARS-1 -1 complex to the boron concentration with a linear range of 0 g梞L -10 g 梞L . The results indicated-1 that this method has a detection limit of 0.12 g梞L , based on signal to ratio of 3, an averagerecovery of 90% ~94%, and a relative standard deviation (RSD) of 2.4%. The results obtained fromthis method were compared with inductively coupled plasma optical emission spectrometry (ICP-OES)method, and no statistically significant difference was found.
机译:提出了一种伏安法测定多晶硅中的痕量硼。研究了几种化学药品和仪器变量的影响,并确定了最佳操作条件。首先,将样品用硝酸(HNO3)/氢氟酸(HF)处理以汽化硅并稳定硼。此后,根据在乙酸铵缓冲液(pH = 6.5)中监测的-460 mV硼与茜素红S(ARS)之间形成的络合物的阳极峰,通过差分脉冲伏安法测定残留的硼。根据上述方法,通过绘制线性范围为0 g梞L -10 g梞L的硼-ARS-1 -1配合物的峰值电流与硼浓度建立校正曲线。结果表明1-该方法的检出限为0.12 g梞L,基于信噪比3,平均回收率为90%〜94%,相对标准偏差(RSD)为2.4%。将该方法获得的结果与电感耦合等离子体发射光谱法(ICP-OES)进行比较,未发现统计学差异。

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