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首页> 外文期刊>International Journal of Electrochemical Science >Enhancement of Structural and Optical Properties of Porous In0.27Ga0.73N Thin Film Synthesized Using Electrochemical Etching Technique
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Enhancement of Structural and Optical Properties of Porous In0.27Ga0.73N Thin Film Synthesized Using Electrochemical Etching Technique

机译：电化学刻蚀技术合成In 0.27 Ga 0.73 N多孔薄膜的结构和光学性质的增强

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This paper presents the growth conditions of In0.27Ga0.73N/Si(111) thin film with thickness of 110 nmprepared using plasma-assisted molecular beam epitaxy technique. Indium mole fraction of 0.27 wascalculated using X-ray diffraction and Vegard law. Some ridges on the film were observed on the as- grown surface morphology. Furthermore, porous In0.27Ga0.73N structure was synthesized using UV- assisted electrochemical etching technique with various current densities. Formed pores weredissimilar in terms of shape and size because of changes in the etching current density. Crystallite sizeand the strain inside the film were calculated for both as-grown and porous In0.27Ga0.73N. The resultshows that both crystallite size and compressive strain decreased with increasing current density. Aslight blue shift of porous In0.27Ga0.73N regarding the wavelength of the as-grown film was observed at554 and 553.1 nm by using photoluminescence measurements. Finally, a Raman phonon mode of-1 A1(LO) at 625.6 cm of the as-grown film was observed. However, a shift towards higher frequencywas monitored in the porous In0.27Ga0.73N film.
机译：本文介绍了用等离子体辅助分子束外延技术制备的厚度为110 nm的In0.27Ga0.73N / Si（111）薄膜的生长条件。使用X射线衍射和Vegard定律计算出0.27的铟摩尔分数。观察到膜上的一些隆起的表面形态。此外，采用紫外线辅助电化学刻蚀技术以各种电流密度合成了多孔In0.27Ga0.73N结构。由于蚀刻电流密度的变化，形成的孔在形状和尺寸上是不同的。计算了生长和多孔In0.27Ga0.73N的微晶尺寸和薄膜内部的应变。结果表明，随着电流密度的增加，微晶尺寸和压缩应变均减小。通过使用光致发光测量，在554和553.1nm处观察到多孔In0.27Ga0.73N相对于所生长的膜的波长的浅蓝移。最后，在所生长的膜的625.6cm处观察到-1A1（LO）的拉曼声子模式。然而，在多孔In0.27Ga0.73N膜中监测到向更高频率的转变。

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