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首页> 外文期刊>International Journal of Electrochemical Science >Pulse Electrochemical Deposition and Photo-electrochemical Characterization of CuInSe2 Thin Films
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Pulse Electrochemical Deposition and Photo-electrochemical Characterization of CuInSe2 Thin Films

机译：CuInSe 2 薄膜的脉冲电化学沉积和光电化学表征

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Direct band gap and high absorption coefficient of copper indium diselenide (CIS) make it as one ofthe most studied ternary chalcogenides for energy conversion. Low cost methods, such aselectrochemical deposition are very beneficial because of large scale production possibility, minimumwaste of components and no requirement of pure starting materials. The pulse electrodeposition allowsindependent variation of duty cycle. In this study pulse electrodeposition of polycrystalline thin film ofCuInSe2 (CIS) onto ITO glass substrates from aqueous solution containing CuSO4, In2(SO4)3 and SeO2was carried out. The probable potential for deposition was determined as -0.9 V from cyclico voltammogram. The deposited film was annealed at 400 C under nitrogen gas flow to provide neutralatmosphere to improve the crystalline quality and remove excess selenium. The film was analyzedusing X-ray diffraction which confirmed that CIS deposit has tetragonal structure. The chalcopyriteformation and consistency in terms of stoichiometry in the deposit were proved. The optical propertyof the thin film was determined base on the measurement by using UV-Vis spectrophotometer. Thedirect band gap for the thin film is around 1.21 eV. As a result, the deposited CIS thin film is apotential candidate to be used in solar cell devices as an energy convertor. Atomic force microscopewas employed to monitor the effect of duty cycles on the morphology of the thin film. It is revealedthat with increasing duty cycle the surface morphology shift from smooth to dendrite structure. Photo- electrochemical characterization was performed under chopped white light in acidic redox media. Itwas showed that CIS film is a photosensitive material and stands as p and n-p type semiconductors byadjusting different duty cycles. The photoactivity of the films was highly affected by their surfacemorphology.
机译：铜铟二硒化物（CIS）的直接带隙和高吸收系数使其成为研究最多的三元硫族化物能量转化材料之一。低成本方法（例如电化学沉积）非常有利，因为它具有大规模生产的可能性，部件的浪费最少并且不需要纯起始原料。脉冲电沉积允许占空比的独立变化。在这项研究中，将CuInSe2（CIS）的多晶薄膜从含CuSO4，In2（SO4）3和SeO2的水溶液中脉冲电沉积到ITO玻璃基板上。由循环伏安图确定的可能沉积电位为-0.9V。将沉积的膜在氮气流下于400℃退火以提供中性气氛，以改善晶体质量并除去过量的硒。使用X射线衍射分析该膜，证实了CIS沉积物具有四方结构。证明了在沉积物中黄铜矿的形成和化学计量的一致性。通过使用UV-Vis分光光度计的测量来确定薄膜的光学性质。薄膜的直接带隙约为1.21 eV。结果，沉积的CIS薄膜是潜在的候选者，其将在太阳能电池装置中用作能量转换器。原子力显微镜被用来监测占空比对薄膜形态的影响。揭示了随着占空比的增加，表面形态从光滑结构转变为枝晶结构。在切碎的白光下在酸性氧化还原介质中进行光电化学表征。结果表明，CIS膜是一种光敏材料，通过调节不同的占空比，可以作为p型和n-p型半导体。薄膜的光活性受其表面形态的影响很大。

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