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首页> 外文期刊>International Journal of Electrochemical Science >Facile Synthesis of Ni3S2@MoS2 Nanowire Arrays Grown on Ni Foam for High Performance Supercapacitor
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Facile Synthesis of Ni3S2@MoS2 Nanowire Arrays Grown on Ni Foam for High Performance Supercapacitor

机译：Ni泡沫上生长的Ni 3 S 2 @MoS 2 纳米线阵列的快速合成用于高性能超级电容器

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摘要

Here, a novel Ni3S2@MoS2 nanowire arrays grown on Ni foam was successfully synthesized by onestep hydrothermal method. At the same time, the diameter of Ni3S2@MoS2 nanowire grown on Nifoam was easily controlled by the reaction times. Furthermore, the electrochemical properties ofNi3S2@MoS2 nanowire arrays grown on Ni foam were analyzed and compared by the cyclicvoltammetry, galvanostatic charge-discharge and electrochemical impedance spectroscopy. It wasfound that the capacitive properties of Ni3S2@MoS2 nanowire arrays grown on Ni foam were related tothe diameter of Ni3S2@MoS2 nanowire. The composite foam containing Ni3S2@MoS2 nanowire withdiameter of ca.320.0nm showed high rate capability of 10.8 F cm-2 at 5.0mA cm-2 and good cyclestability with capacitance retention of 83.0% after 1000 cycles. The capability was obviously highercomparing to others Ni3S2 grown on Ni foam reported in previous works. These results implied that thedesign of Ni3S2@MoS2 grown on Ni foam without polymer binder was an ideal candidate forsupercapacitor applications.
机译：在此，通过一步水热法成功地合成了在泡沫镍上生长的新型Ni3S2 @ MoS2纳米线阵列。同时，在Nifoam上生长的Ni3S2 @ MoS2纳米线的直径很容易受到反应时间的控制。此外，通过循环伏安法，恒电流充放电和电化学阻抗谱分析和比较了在泡沫镍上生长的Ni3S2 @ MoS2纳米线阵列的电化学性能。研究发现，在Ni泡沫上生长的Ni3S2 @ MoS2纳米线阵列的电容特性与Ni3S2 @ MoS2纳米线的直径有关。包含直径约为320.0nm的Ni3S2 @ MoS2纳米线的复合泡沫材料在5.0mA cm-2下显示出10.8 F cm-2的高倍率能力，并具有良好的循环稳定性，在1000次循环后的电容保持率为83.0％。与以前工作中报道的在泡沫镍上生长的其他Ni3S2相比，该能力明显更高。这些结果表明，在没有聚合物粘合剂的镍泡沫上生长的Ni3S2 @ MoS2的设计是超级电容器应用的理想选择。

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