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首页> 外文期刊>International Journal of Electrochemical Science >Electrodeposition of Bi2Te3 thin films onto FTO substrates from DMSO solution
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Electrodeposition of Bi2Te3 thin films onto FTO substrates from DMSO solution

机译：DMSO溶液将Bi 2 Te 3 薄膜电沉积到FTO基板上

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摘要

We report the pulsed electrodeposition (PED) of Bi2Te3 thin films from TeCl4 and Bi(NO3)3 precursorsdissolved in dimethylsulfoxide (DMSO) onto SnO2:F coated glasses (FTO) and CdTe/FTO substrates.Results of a detailed set of chronoamperometric experiments allowed us to simulate the correspondingexperimental j/t transients through their fitting with different possible contributions involved in thenucleation-growth mechanisms (NGMs) of the Bi2Te3 phase. From this information it was possible toemploy a set of potential/time step programs intended to select those resulting in adherent good qualitythin films. AFM and SEM micrographs exhibited complete substrate coverage whereas EDX analysisgave Bi/Te ratios close to the expected stoichiometry. High-resolution X-ray diffraction analysisshowed that the films were grown in the trigonal phase without the presence of other phases. Fromelectrochemical impedance spectroscopy measurements it was possible to establish the n- typeconductivity of the films which was further confirmed by photoelectrochemical experiments. Resultsopen the possibility of using electrodeposited Bi2Te3 thin films instead of copper as back contact inCdTe based photovoltaic solar cells.
机译：我们报道了从TeCl4和Bi（NO3）3前体溶解在二甲基亚砜（DMSO）中的Bi2Te3薄膜到SnO2：F涂层玻璃（FTO）和CdTe / FTO衬底上的脉冲电沉积（PED）。允许一组详细的计时电流实验结果我们通过对Bi2Te3相成核-生长机制（NGM）涉及的不同可能贡献进行拟合来模拟相应的实验j / t瞬变。从这些信息中，有可能采用一组可能的/时间步长的程序，以选择那些能产生附着力好的高质量薄膜的程序。 AFM和SEM显微照片显示出完全的基质覆盖范围，而EDX分析显示Bi / Te比值接近预期的化学计量。高分辨率X射线衍射分析表明，该膜在三角相中生长，而没有其他相的存在。通过电化学阻抗谱测量，可以确定薄膜的n型电导率，这已通过光电化学实验进一步证实。结果开辟了在基于CdTe的光伏太阳能电池中使用电沉积Bi2Te3薄膜代替铜作为背接触的可能性。

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