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首页> 外文期刊>International Journal of Electrochemical Science >Multi-cycle Growth of Boron Doped ZnO Films as Photoanode for Dye-Sensitized Solar Cell (DSSC)
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Multi-cycle Growth of Boron Doped ZnO Films as Photoanode for Dye-Sensitized Solar Cell (DSSC)

机译：硼掺杂ZnO薄膜作为染料敏化太阳能电池（DSSC）的光阳极的多周期生长

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摘要

The work is concerned with the fabrication of dye sensitized solar cell (DSSC) utilizing multi-layerboron doped ZnO nanorods films. The B-doped ZnO films were prepared on FTO glass substrate viaseed mediated hydrothermal method. Multi-layer B-doped ZnO nanorods were obtained by immersingo the sample into a growth solution and repeated the growth process at 90 C for 30 minutes. Thestructure of the B-doped ZnO film has been found to exhibit the hexagonal wurtzite structure. Thelength and diameter of the nanorods increase with the number of the growth cycle. The performance ofthe DSSC fabricated using the multi-layer B-doped ZnO nanorod was found to be significantly higherthan that of the DSSC based on the single layer ZnO nanorod arrays. The best photovoltaic parameters-2 with the JSC of 3.5 mA cm , FF of 0.38 and of 0.67%, respectively was obtained for the deviceutilizing the layer with 3 cycles since it possesses the lowest photoluminescence in visible region andlowest Rct.
机译：这项工作涉及利用多层掺硼的ZnO纳米棒薄膜制造染料敏化太阳能电池（DSSC）。通过种子介导的水热法在FTO玻璃基板上制备了B掺杂ZnO薄膜。多层B掺杂ZnO纳米棒是通过将样品浸入生长溶液中并在90°C下重复30分钟的生长过程而获得的。已经发现掺B的ZnO膜的结构表现出六方纤锌矿结构。纳米棒的长度和直径随着生长周期的数量而增加。发现使用多层B掺杂的ZnO纳米棒制造的DSSC的性能明显高于基于单层ZnO纳米棒阵列的DSSC的性能。利用具有3个循环的层的器件获得了最佳的光伏参数-2，其JSC分别为3.5mA cm，FF为0.38和0.67％，这是因为其在可见光区域具有最低的光致发光并且具有最低的Rct。

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