Zn Electrodeposition on Single-Crystal GaN(0001) Surface: Nucleation and Growth Mechanism

Fei Peng; Shuang-Jiao Qin; Yu Zhao; Ge-Bo Pan

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Zn Electrodeposition on Single-Crystal GaN(0001) Surface: Nucleation and Growth Mechanism

机译：单晶GaN（0001）表面的Zn电沉积：成核和生长机理

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The electrochemical deposition of zinc on single-crystal n-type GaN(0001) from a sulphate solution has been investigated on the basis of electrochemical techniques including cyclic voltammetry, chronoamperometry, and Tafel plot. The morphology and crystal structure of zinc deposits have been characterized by means of scanning electron microscopy, X-ray diffraction, and energy-dispersive X-ray analysis. The result has revealed that the deposition of Zn on GaN electrode commenced at a potential of ?1.12?V versus Ag/AgCl. According to the Tafel plot, an exchange current density of ~0.132?mA?cm?2 was calculated. In addition, the current transient measurements have shown that Zn deposition process followed the instantaneous nucleation in 10?mM ZnSO4 + 0.5?M Na2SO4 + 0.5?M H3BO3 (pH = 4).

机译：基于电化学技术，包括循环伏安法，计时电流法和Tafel图，已经研究了锌从硫酸盐溶液在单晶n型GaN（0001）上的电化学沉积。锌沉积物的形态和晶体结构已通过扫描电子显微镜，X射线衍射和能量色散X射线分析进行了表征。结果表明，Zn在GaN电极上的沉积开始于相对于Ag / AgCl的电位为1.12V。根据Tafel图，计算出的交换电流密度为约0.132ΩmA·cm 2。另外，当前的瞬态测量结果表明，Zn沉积过程是在10μmMZnSO4 +0.5μMNa2SO4 +0.5μMH3BO3（pH = 4）中瞬时成核之后进行的。

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《International Journal of Electrochemistry》 |2016年第1期|共8页
作者
Fei Peng; Shuang-Jiao Qin; Yu Zhao; Ge-Bo Pan;
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Zn Electrodeposition on Single-Crystal GaN(0001) Surface: Nucleation and Growth Mechanism

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