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首页> 外文期刊>International Journal of Technology >Design and Simulation of Two Bits Single-electron Logic Circuit using Double Quantum Dot Single Electron Transistor
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Design and Simulation of Two Bits Single-electron Logic Circuit using Double Quantum Dot Single Electron Transistor

机译：双量子点单电子晶体管的两位单电子逻辑电路的设计与仿真

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摘要

Electrons in a single electron transistor (SET) are transported one by one from source to drain based on the coulomb blockade mechanism. The transport rate is sensitively influenced by the presence of event a single electron charge located near the quantum dot. Based on this characteristic, we propose a Double Quantum Dot (DQD) SET to manipulate the presence of an electron in Quantum Dot (QD) as an implementation of a single-electron logic concept. The existence of an electron in the QD is used to represent logic 0 (no electron in QD) or logic 1 (an electron in QD). The logic states are sensed by a SET charge detector. Design of circuit based on DQD and SET charge detector are simulated by using SIMON 2.0 software. From the simulation, we have successfully developed a two-bit logic circuit by controlling the presence of an electron in DQD. We found that the existence of an electron in QD can be controlled by application of a gate voltage larger than 190μV. Gate should be separated from QD by a non-tunnel capacitor of 500 aF. No larger than 1 aF of interdot tunnel capacitance is required to isolate the QD from one to another. The existence of an electron in QD is successfully detected by SET based charge detector.
机译：基于库仑阻塞机制，单个电子晶体管（SET）中的电子从源极到漏极一一传输。传输速度受事件的存在敏感地影响，该事件位于量子点附近。基于此特性，我们提出了一种双量子点（DQD）SET来操纵量子点（QD）中电子的存在，作为单电子逻辑概念的一种实现。 QD中电子的存在用于表示逻辑0（QD中没有电子）或逻辑1（QD中的电子）。逻辑状态由SET电荷检测器检测。利用SIMON 2.0软件对基于DQD和SET电荷检测器的电路设计进行了仿真。通过仿真，我们已经通过控制DQD中电子的存在成功开发了两位逻辑电路。我们发现，可以通过施加大于190μV的栅极电压来控制QD中电子的存在。栅极应通过500 aF的非隧道电容与QD隔离。要使QD彼此隔离，需要不超过1 aF的点间隧道电容。通过基于SET的电荷检测器可以成功检测QD中电子的存在。

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