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首页> 外文期刊>International Journal of Photoenergy >Preparation of the group III nitride thin films AlN, GaN, InN by direct and reactive pulsed laser ablation
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Preparation of the group III nitride thin films AlN, GaN, InN by direct and reactive pulsed laser ablation

机译：直接和反应脉冲激光烧蚀制备III族氮化物薄膜AlN，GaN，InN

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摘要

The methods of preparation of the group III nitrides AlN, GaN, and InN by laser ablation (i.e. lasersputtering), is here reviewed including studies on their properties. The technique, concerns direct ablationof nitride solid targets by laser to produce a plume which is collected on a substrate. Alternatively nitridedeposition is obtained as a result of laser ablation of the metal and subsequent reaction in anNH3atmosphere. Optical multichannel emission spectroscopic analysis, and time of flight (TOF) mass spectrometryhave been applied forin situidentification of deposition precursors in the plume moving from the target.Epitaxial AlN, GaN, and InN thin films on various substrates have been grown. X-ray diffraction, scanningelectron microscopy, have been used to characterise thin films deposited by these methods.
机译：本文回顾了通过激光烧蚀（即激光溅射）制备III族氮化物AlN，GaN和InN的方法，包括对其性能的研究。该技术涉及通过激光直接烧蚀氮化物固体靶以产生羽状物，该羽状物被收集在基底上。备选地，由于金属的激光烧蚀和随后在NH 3气氛中的反应而获得氮化物沉积。光学多通道发射光谱分析和飞行时间（TOF）质谱已用于从目标流中羽流中沉积前体的原位鉴定。已在各种基板上生长了外延AlN，GaN和InN薄膜。 X射线衍射，扫描电子显微镜已用于表征通过这些方法沉积的薄膜。

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