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首页> 外文期刊>International Journal of Photochemistry and Photobiology >Broading Spectral Line Method for Determination Structural Parameters and Electronic Transitions in CdSe Artificial Atom
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Broading Spectral Line Method for Determination Structural Parameters and Electronic Transitions in CdSe Artificial Atom

机译：宽光谱线法确定CdSe人工原子的结构参数和电子跃迁

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摘要

Multi layers CdSe artificial atoms system prepared using Spin coating method. Using W-H method, which based on XRD Broading line profile, structural parameters of FTO/CdSe system were calculated. XRD spectrum reveal that CdSe nanoparticles have hexagonal structure, have high strain, show deposition layer on other do more stress and strain (Crystallization size (6.16 A°), lattice constant C(7.16A°), effective strain (0.07377 (lin~(-2) m~(-4))) between the nano crystals and dislocation (irregular) (26.443×10~(20) (lin..m~(-2))) were determined), which confirm more later by anther spectroscopic method. By doing fitting between experimental and theoretical absorption using Gaussian profile and Doppler broading line. Different electronic transitions were deduced and other broading curve were studying such as effect of particle size of artificial atoms, with doing more accurate fitting reveals existence of two intensities lines attributed to diffusion layer between FTO and CdSe artificial atoms.
机译：采用旋涂法制备的多层CdSe人工原子体系。使用基于XRD宽线轮廓的W-H方法，计算了FTO / CdSe系统的结构参数。 XRD光谱表明CdSe纳米颗粒具有六边形结构，高应变，在其他沉积层上表现出更大的应力和应变（结晶尺寸（6.16 A°），晶格常数C（7.16A°），有效应变（0.07377（lin〜纳米晶体之间的-2）m〜（-4）））和位错（不规则）（26.443×10〜（20）（lin..m〜（-2）））确定，稍后由花药进一步证实光谱法。通过使用高斯剖面和多普勒展宽线在实验吸收和理论吸收之间进行拟合。推导了不同的电子跃迁，并研究了其他拓宽曲线，例如人造原子的粒径效应，进行更精确的拟合揭示了存在于FTO和CdSe人造原子之间的扩散层的两条强度线。

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