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首页> 外文期刊>ISIJ international >Effect of Heating Rate and Annealing Temperature on Secondary Recrystallization of Goss Grains in a Grain Orientated Silicon Steel
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Effect of Heating Rate and Annealing Temperature on Secondary Recrystallization of Goss Grains in a Grain Orientated Silicon Steel

机译：加热速率和退火温度对取向硅钢中高斯晶粒二次再结晶的影响

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摘要

In this investigation, a grain oriented silicon steel was annealed from a starting state of its primary recrystallized condition by varying time, temperature and heating rate to elucidate the phenomena that occur during the secondary recrystallization growth of Goss grains. Goss secondary recrystallization occurs in a temperature range from 900 to 1000°C. Using a slow rate of heating (5°C/minute) to the annealing temperature yields more scattering in the Goss orientation during the early stages of secondary growth, compared with rapid heating to the annealing temperature in a preheated furnace. Irrespective of the early stage annealing events, after extended annealing to 300 minutes, Goss texture dominates through both rapid and slow heating annealing. Goss growth starts from the sub-surface regions of the sheet, where the concentration of η -fibre grains is high. At a higher annealing temperature (1000°C) faster Goss growth occurs at more frequent sites and, as a result, when the process is completed the average size of Goss grains are smaller than that observed through annealing at 900°C. These investigations were conducted by annealing in an air-circulating furnace followed by extensive orientation measurements through electron backscattered diffraction (EBSD) in a field emission gun scanning electron microscope (FEG SEM) and analysis using a transmission electron microscope (TEM).
机译：在这项研究中，通过改变时间，温度和加热速率，将取向硅钢从其初次再结晶条件的初始状态进行退火，以阐明戈斯晶粒二次再结晶生长过程中发生的现象。高斯二次重结晶发生在900至1000°C的温度范围内。与在预热炉中快速加热到退火温度相比，在二次生长的早期阶段，采用缓慢的加热速率（5℃/分钟）至退火温度会在高斯取向上产生更多的散射。与早期退火事件无关，在延长退火至300分钟后，高斯织构在快速和缓慢加热退火中均占主导地位。高斯生长从薄板的次表面区域开始，在此，η-纤维颗粒的浓度很高。在较高的退火温度（1000°C）下，高斯生长会在更频繁的位置发生，因此，当该过程完成时，高斯晶粒的平均尺寸小于在900°C退火所观察到的尺寸。这些研究是通过在空气循环炉中进行退火，然后在场发射枪扫描电子显微镜（FEG SEM）中通过电子背散射衍射（EBSD）进行广泛的取向测量以及使用透射电子显微镜（TEM）进行分析来进行的。

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