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首页> 外文期刊>European Chemical Bulletin >PECULIARITIES OF “ALLOY” SCATTERING IN SEMICONDUCTORS
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PECULIARITIES OF “ALLOY” SCATTERING IN SEMICONDUCTORS

机译：半导体中“合金”散射的特性

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There has been investigated the effect of nanometer size disordered regions in Si x Ge 1– x and InP x As 1– x semiconductor alloys on the charge carriers mobility. An investigation has shown, that composition dependence of the mobility appears as a result of competition of main processes of current carriers scattering on phonons, ionized impurities and “alloy” disorders in Si x Ge 1– x and InP x As 1– x alloys. We have calculated the contribution of these scattering processes into total scattering. Share of contribution of “alloy” disorders into the total mobility is different for Si x Ge 1– x and InP x As 1– x solid solutions. Unlike Si x Ge 1– x alloys the “alloy” disorders in InP x As 1– x practically do not disturb the crystal lattice in tangible way at temperatures in the range of 4.2 – 300 K because of sublattices of InP and InAs retain certain individuality in InP x As 1– x alloys.
机译：已经研究了Si x Ge 1–x和InP x As 1–x半导体合金中纳米尺寸无序区对电荷载流子迁移率的影响。研究表明，迁移率的成分依赖性是由于电流载流子在Si x Ge 1-x和InP x As 1-x合金中的声子，电离杂质和“合金”无序散布的主要过程竞争的结果。我们已经计算了这些散射过程对总散射的贡献。对于Si x Ge 1–x和InP x As 1–x固溶体，“合金”疾病在总迁移率中的贡献份额不同。与Si x Ge 1– x合金不同，InP x As 1– x中的“合金”缺陷实际上不会在4.2 – 300 K的温度范围内以有形方式干扰晶格，因为InP和InAs的亚晶格保留了一定的个性在InP x As 1-x合金中。

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