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Determination of atomic vacancies in InAs/GaSb strained-layer superlattices by atomic strain

机译：原子应变法测定InAs / GaSb应变层超晶格中的原子空位

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Determining vacancy in complex crystals or nanostructures represents an outstanding crystallographic problem that has a large impact on technology, especially for semiconductors, where vacancies introduce defect levels and modify the electronic structure. However, vacancy is hard to locate and its structure is difficult to probe experimentally. Reported here are atomic vacancies in the InAs/GaSb strained-layer superlattice (SLS) determined by atomic-resolution strain mapping at picometre precision. It is shown that cation and anion vacancies in the InAs/GaSb SLS give rise to local lattice relaxations, especially the nearest atoms, which can be detected using a statistical method and confirmed by simulation. The ability to map vacancy defect-induced strain and identify its location represents significant progress in the study of vacancy defects in compound semiconductors.
机译：确定复杂晶体或纳米结构中的空位是一个突出的晶体学问题，对技术产生重大影响，特别是对于半导体来说，空位会引入缺陷水平并改变电子结构，对半导体尤其如此。但是，空位很难定位，其结构很难通过实验进行探测。在此报告的是InAs / GaSb应变层超晶格（SLS）中的原子空位，该原子空位是通过以原子为单位，以微米为单位的原子分辨率应变映射确定的。结果表明，InAs / GaSb SLS中的阳离子和阴离子空位会引起局部晶格弛豫，特别是最近的原子，这可以使用统计方法进行检测并通过模拟进行确认。映射空位缺陷引起的应变并确定其位置的能力代表了化合物半导体中空位缺陷研究的重大进展。

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