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首页> 外文期刊>Facta Universitatis. Series Electronics and Energetics >IMPACT OF CHANNEL ENGINEERING (SI1-0.25GE0.25) TECHNIQUE ON GM (TRANSCONDUCTANCE) AND ITS HIGHER ORDER DERIVATIVES OF 3D CONVENTIONAL AND WAVY JUNCTIONLESS FINFETS (JLT)
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IMPACT OF CHANNEL ENGINEERING (SI1-0.25GE0.25) TECHNIQUE ON GM (TRANSCONDUCTANCE) AND ITS HIGHER ORDER DERIVATIVES OF 3D CONVENTIONAL AND WAVY JUNCTIONLESS FINFETS (JLT)

机译：通道工程（SI1-0.25GE0.25）技术对GM（超导）及其3D常规和波浪无结弹性场效应晶体管（JLT）的较高阶导数的影响

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The paper explores the analog analysis and higher order derivatives of drain current (ID) at gate source voltage (VGS), by introducing channel engineering technique of 3D conventional and Wavy Junctionless FinFETs (JLT) as silicon germanium? (Si1-0.25Ge0.25) device layer. In view of this, the performances are carried out for different gate length (LG) values (15-30 nm) and current characteristics determined by maintaining constant ON current (ION 10-5) (A/μm) for both devices. With respect to this, a comparison has been made between these MOS structures at molefraction x = 0.25 and it was found that the electric field is perpendicular to the current flow which induces volume inversion approach. Accordingly, for the simulation study better channel controllability over the gate is observed for Wavy structures and high ID induces as the LG scales down. With respect to this the constant ION determine ID, transconductance (gm), transconductance generation factor (TGF) and its higher order terms (gm, and gm) of the devices are studied with relaxed SiGe approximation. The extensive simulation study on short channel (SC) parameters are also performed and it is observed that the Wavy JL FinFET shows less sensitivity towards short channel effects (SCEs) over conventional one, therefore the dependency of N-type doping concentration (ND = 1.7x1019 cm-3) and metal workfunction (?M = 4.6 eV) are responsible to achieving reduced SCEs.
机译：通过介绍3D常规和波浪无结FinFET（JLT）作为硅锗的沟道工程技术，探索了栅源电压（VGS）时漏极电流（ID）的模拟分析和高阶导数。 （Si1-0.25Ge0.25）器件层。鉴于此，针对两个器件的不同栅极长度（LG）值（15-30 nm）和通过保持恒定的导通电流（ION 10-5）（A /μm）确定的电流特性来执行性能。相对于此，在摩尔分数x ＝ 0.25时在这些MOS结构之间进行了比较，并且发现电场垂直于电流，这引起了体积反转方法。因此，对于仿真研究，对于波浪结构观察到了在栅极上更好的通道可控性，并且随着LG的缩小，产生了高ID。对此，使用松弛的SiGe近似研究了器件的恒定ION确定ID，跨导（gm），跨导生成因子（TGF）及其更高阶项（g m和g m）。还对短沟道（SC）参数进行了广泛的仿真研究，并且观察到，与传统的相比，Wavey JL FinFET对短沟道效应（SCE）的灵敏度更低，因此对N型掺杂浓度的依赖性（ND = 1.7 x1019 cm-3）和金属功函数（ΔM= 4.6 eV）有助于降低SCE。

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