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首页> 外文期刊>Frontiers in Chemistry >Structural and Optical Properties of Silicon Nanowire Arrays Fabricated by Metal Assisted Chemical Etching with Ammonium Fluoride
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Structural and Optical Properties of Silicon Nanowire Arrays Fabricated by Metal Assisted Chemical Etching with Ammonium Fluoride

机译：氟化铵金属辅助化学刻蚀制备硅纳米线阵列的结构和光学性质

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Here we report on the metal assisted chemical etching method of silicon nanowires (SiNWs) manufacturing, where the commonly used hydrofluoric acid (HF) has been successfully replaced with ammonium fluoride (NH4F). The mechanism of the etching process and the effect of the pH values of H2O2: NH4F solutions on the structural and optical properties of nanowires were studied in detail. By an impedance and Mott-Schottky measurements it was shown that silver-assisted chemical etching of silicon can be attributed to a facilitated charge carriers transport through Si/SiOx/Ag interface. It was shown that the shape of nanowires changes from pyramidal to vertical with pH decreasing. Also it was established that the length of SiNW arrays nonlinearly depends on the pH for the etching time of 10 minutes. A strong decrease of the tоtаl reflectance to 5-10 % was shown for all the studied samples at the wavelength less than 800 nm, in comparison with crystalline silicon substrate (с-Si). At the same time, the intensities of the interband photoluminescence and the Raman scattering of SiNWs are increased strongly in compare to c-Si value, and also they were depended on both the length and the shape of SiNW: the biggest values were for the long pyramidal nanowires. That can be explained by a strong light scattering and partial light localization in SiNWs. Hereby, arrays of SiNWs, obtained by using weakly toxic ammonium fluoride, have great potential for usage in photovoltaics, photonics, and sensorics.
机译：在这里，我们报告了硅纳米线（SiNWs）制造的金属辅助化学蚀刻方法，其中常用的氢氟酸（HF）已成功被氟化铵（NH4F）代替。详细研究了腐蚀过程的机理以及H2O2：NH4F溶液的pH值对纳米线的结构和光学性能的影响。通过阻抗和莫特-肖特基（Mott-Schottky）测量表明，银对硅的化学蚀刻可归因于通过Si / SiOx / Ag界面促进的载流子传输。结果表明，随着pH值的降低，纳米线的形状从金字塔形变为垂直形。还可以确定，对于10分钟的蚀刻时间，SiNW阵列的长度非线性地取决于pH值。与晶体硅衬底（с-Si）相比，波长小于800 nm的所有研究样品的总反射率均显着降低至5-10％。同时，与c-Si值相比，SiNW的带间光致发光强度和拉曼散射强度大大增加，并且它们都取决于SiNW的长度和形状：最大值是长的锥体纳米线。这可以通过SiNW中的强光散射和部分光局部化来解释。因此，通过使用弱毒性氟化铵获得的SiNW阵列具有巨大的潜力，可用于光伏，光子学和传感技术。

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