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Comparisons of Damage Evolution between 2D C/SiC and SiC/SiC Ceramic-Matrix Composites under Tension-Tension Cyclic Fatigue Loading at Room and Elevated Temperatures

机译:室温和高温下拉伸张力循环疲劳载荷下2 C / SiC和SiC / SiC陶瓷基复合材料损伤演化的比较

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In this paper, comparisons of damage evolution between 2D C/SiC and SiC/SiC ceramic-matrix composites (CMCs) under tension–tension cyclic fatigue loading at room and elevated temperatures have been investigated. Fatigue hysteresis loops models considering multiple matrix cracking modes in 2D CMCs have been developed based on the damage mechanism of fiber sliding relative to the matrix in the interface debonded region. The relationships between the fatigue hysteresis loops, fatigue hysteresis dissipated energy, fatigue peak stress, matrix multiple cracking modes, and interface shear stress have been established. The effects of fiber volume fraction, fatigue peak stress and matrix cracking mode proportion on fatigue hysteresis dissipated energy and interface debonding and sliding have been analyzed. The experimental fatigue hysteresis dissipated energy of 2D C/SiC and SiC/SiC composites at room temperature, 550 °C, 800 °C, and 1100 °C in air, and 1200 °C in vacuum corresponding to different fatigue peak stresses and cycle numbers have been analyzed. The interface shear stress degradation rate has been obtained through comparing the experimental fatigue hysteresis dissipated energy with theoretical values. Fatigue damage evolution in C/SiC and SiC/SiC composites has been compared using damage parameters of fatigue hysteresis dissipated energy and interface shear stress degradation rate. It was found that the interface shear stress degradation rate increases at elevated temperature in air compared with that at room temperature, decreases with increasing loading frequency at room temperature, and increases with increasing fatigue peak stress at room and elevated temperatures.
机译:本文研究了在室温和高温下,在拉伸-拉伸循环疲劳载荷下,二维C / SiC与SiC / SiC陶瓷基复合材料(CMC)的损伤演化比较。基于界面分离区纤维相对于基体滑动的损伤机理,建立了考虑二维CMCs中多种基体破裂模式的疲劳磁滞回线模型。建立了疲劳磁滞回线,疲劳磁滞耗散能,疲劳峰值应力,基体多重裂纹模式和界面剪切应力之间的关系。分析了纤维体积分数,疲劳峰值应力和基体开裂模式比例对疲劳磁滞耗散能,界面剥离和滑动的影响。二维C / SiC和SiC / SiC复合材料在室温,空气中550°C,800°C和1100°C以及真空中1200°C时的实验疲劳磁滞耗散能量分别对应于不同的疲劳峰值应力和循环次数已经分析过了。通过将实验的疲劳磁滞耗散能量与理论值进行比较,可以得出界面剪切应力的退化率。利用疲劳磁滞耗散能量和界面剪切应力退化率的损伤参数,比较了C / SiC和SiC / SiC复合材料的疲劳损伤演化。发现在室温下,与在室温下相比,空气中的界面剪切应力降解率增加,在室温下随着加载频率的增加而降低,并且在室温和高温下,随着疲劳峰值应力的增加而增加。

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