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The Microstructure of Nanocrystalline TiB 2 Films Prepared by Chemical Vapor Deposition

机译：化学气相沉积法制备纳米晶TiB 2薄膜的微观结构

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Nanocrystalline titanium diboride (TiB 2 ) ceramics films were prepared on a high purity graphite substrate via chemical vapor deposition (CVD). The substrate was synthesized by a gas mixture of TiCl 4 , BCl 3 , and H 2 under 1000 ???°C and 10 Pa. Properties and microstructures of TiB 2 films were also examined. The as-deposited TiB 2 films had a nano-sized grain structure and the grain size was around 60 nm, which was determined by X-ray diffraction, field emission scanning electron microscopy, and transmission electron microscopy. Further research found that a gas flow ratio of TiCl 4 /BCl 3 had an influence on the film properties and microstructures. The analyzed results illustrated that the grain size of the TiB 2 film obtained with a TiCl 4 /BCl 3 gas flow ratio of 1, was larger than the grain size of the as-prepared TiB 2 film prepared with a stoichiometric TiCl 4 /BCl 3 gas flow ratio of 0.5. In addition, the films deposited faster at excessive TiCl 4 . However, under the condition of different TiCl 4 /BCl 3 gas flow ratios, all of the as-prepared TiB 2 films have a preferential orientation growth in the (100) direction.
机译：纳米晶二硼化钛（TiB 2）陶瓷薄膜是通过化学气相沉积（CVD）在高纯度石墨基板上制备的。在1000℃和10Pa下用TiCl 4，BCl 3和H 2的气体混合物合成衬底。还检查了TiB 2膜的性能和微观结构。所沉积的TiB 2膜具有纳米尺寸的晶粒结构，并且晶粒尺寸为约60nm，这是通过X射线衍射，场发射扫描电子显微镜和透射电子显微镜确定的。进一步的研究发现，TiCl 4 / BCl 3的气体流量比对薄膜的性能和微观结构有影响。分析结果表明，以TiCl 4 / BCl 3气体流量比为1获得的TiB 2膜的晶粒尺寸大于用化学计量的TiCl 4 / BCl 3制备的TiB 2膜的晶粒尺寸。气体流量比为0.5。另外，膜在过量的TiCl 4下沉积得更快。然而，在不同的TiCl 4 / BCl 3气体流量比的条件下，所有所制备的TiB 2膜均在（100）方向上具有优先的取向生长。

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