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首页> 外文期刊>Materials >Enhanced Unipolar Resistive Switching Characteristics of Hf 0.5 Zr 0.5 O 2 Thin Films with High ON/OFF Ratio
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Enhanced Unipolar Resistive Switching Characteristics of Hf 0.5 Zr 0.5 O 2 Thin Films with High ON/OFF Ratio

机译：高开/关比的Hf 0.5 Zr 0.5 O 2薄膜的增强单极电阻开关特性

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摘要

A metal–insulator–metal structure resistive switching device based on H 0.5 Z 0.5 O 2 (HZO) thin film deposited by pulse laser deposition (PLD) has been investigated for resistive random access memory (RRAM) applications. The devices demonstrated bistable and reproducible unipolar resistive switching (RS) behaviors with an extremely high OFF/ON ratio over 5400. The retention property had no degradation at 6 × 10 4 s. The current–voltage characteristics of the HZO samples showed a Schottky emission conduction in the high voltage region (V reset < V < V set ), while at the low voltage region (V < V reset ), the ohmic contact and space charge limited conduction (SCLC) are suggested to be responsible for the low and high resistance states, respectively. Combined with the conductance mechanism, the RS behaviors are attributed to joule heating and redox reactions in the HZO thin film induced by the external electron injection.
机译：已经研究了基于H 0.5 Z 0.5 O 2（HZO）薄膜的金属-绝缘体-金属结构电阻开关器件，该薄膜通过脉冲激光沉积（PLD）沉积，用于电阻随机存取存储器（RRAM）应用。这些器件表现出双稳态和可重现的单极电阻开关（RS）行为，在5400之上具有极高的OFF / ON比。保持特性在6×10 4 s时没有退化。 HZO样品的电流-电压特性在高电压区域（V reset

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