...
首页> 外文期刊>Materials >Influence of Discharge Current on Phase Transition Properties of High Quality Polycrystalline VO 2 Thin Film Fabricated by HiPIMS
【24h】

Influence of Discharge Current on Phase Transition Properties of High Quality Polycrystalline VO 2 Thin Film Fabricated by HiPIMS

机译:放电电流对HiPIMS制造高质量多晶VO 2薄膜相变性能的影响

获取原文
           

摘要

To fabricate high-quality polycrystalline VO 2 thin film with a metal–insulator transition (MIT) temperature less than 50 °C, high-power impulse magnetron sputtering with different discharge currents was employed in this study. The as-deposited VO 2 films were characterized by a four-point probe resistivity measurement system, visible-near infrared (IR) transmittance spectra, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and scanning electron microscopy. The resistivity results revealed that all the as-deposited films had a high resistance change in the phase transition process, and the MIT temperature decreased with the increased discharge current, where little deterioration in the phase transition properties, such as the resistance and transmittance changes, could be found. Additionally, XRD patterns at various temperatures exhibited that some reverse deformations that existed in the MIT process of the VO 2 film, with a large amount of preferred crystalline orientations. The decrease of the MIT temperature with little deterioration on phase transition properties could be attributed to the reduction of the preferred grain orientations.
机译:为了制造金属-绝缘体转变(MIT)温度低于50°C的高质量多晶VO 2薄膜,本研究采用具有不同放电电流的高功率脉冲磁控溅射。通过四点探针电阻率测量系统,可见-近红外(IR)透射光谱,X射线衍射(XRD),X射线光电子能谱(XPS)和扫描电子显微镜对VO 2薄膜进行表征。 。电阻率结果表明,所有沉积的薄膜在相变过程中都具有较高的电阻变化,而MIT温度随放电电流的增加而降低,其中相变特性(如电阻和透射率)的变化很小,可以找到。另外,在各种温度下的XRD图样显示出在VO 2膜的MIT工艺中存在一些反向变形,具有大量优选的晶体取向。麻省理工学院温度的降低而相变性能几乎没有下降,这可能归因于优选晶粒取向的降低。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号