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首页> 外文期刊>Materials >Characterization of Gallium Indium Phosphide and Progress of Aluminum Gallium Indium Phosphide System Quantum-Well Laser Diode
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Characterization of Gallium Indium Phosphide and Progress of Aluminum Gallium Indium Phosphide System Quantum-Well Laser Diode

机译：镓铟磷化物的表征及铝镓磷化物体系量子阱激光二极管的研究进展

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Highly ordered gallium indium phosphide layers with the low bandgap have been successfully grown on the (100) GaAs substrates, the misorientation toward [01?1] direction, using the low-pressure metal organic chemical vapor deposition method. It is found that the optical properties of the layers are same as those of the disordered ones, essentially different from the ordered ones having two orientations towards [1?11] and [11?1] directions grown on (100) gallium arsenide substrates, which were previously reported. The bandgap at 300 K is 1.791 eV. The value is the smallest ever reported, to our knowledge. The high performance transverse stabilized AlGaInP laser diodes with strain compensated quantum well structure, which is developed in 1992, have been successfully obtained by controlling the misorientation angle and directions of GaAs substrates. The structure is applied to quantum dots laser diodes. This paper also describes the development history of the quantum well and the quantum dots laser diodes, and their future prospects.
机译：使用低压金属有机化学气相沉积法，已在（100）GaAs衬底上成功地生长了具有低带隙的高度有序的磷化铟镓层，其取向失向[01？1]方向。发现该层的光学性质与无序层的光学性质相同，与在（100）砷化镓衬底上生长的朝向[1？11]和[11？1]方向具有两个取向的有序层基本不同，先前已报道过。 300 K时的带隙为1.791 eV。据我们所知，该价值是有史以来最小的。通过控制GaAs衬底的取向角和方向，已成功获得了1992年开发的具有应变补偿量子阱结构的高性能横向稳定AlGaInP激光二极管。该结构被应用于量子点激光二极管。本文还描述了量子阱和量子点激光二极管的发展历史，以及它们的未来前景。

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