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Preparation of ZnO film on p-Si and I-V characteristics of p-Si-ZnO

机译：在p-Si上制备ZnO膜和p-Si / n-ZnO的I-V特性

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Zinc oxide (ZnO) thin films were deposited on p-silicon (Si) substrate from ammonium zincate bath following a chemical dipping technique called SILAR. Films in the thickness range 0.5-4.5 μm could be prepared by varying the number of dipping for a fixed concentration (0.125 M) of zincate bath and fixed pH (11.00-11.10). Higher values of dipping produced nonadherent and poor quality films. Structural characterization by X-ray diffraction (XRD) indicates the formation of polycrystalline single phase ZnO with strong c-axis orientation. The structural characteristics of the films were found to be a sensitive function of film thickness. The degree of orientation was found to be a function of film thickness and a maximum was found at around 2.2 μm. Scanning electron microscopy (SEM) reveals the formation of sub-micrometer crystallites on silicon substrate. The coverage of crystallites (grains) on substrate surface increases with number of dipping. Dense film containing grains distributed throughout the surface is obtained at large thicknesses. The ohmic nature of silver (Ag) on ZnO and Aluminum (Al) on p-Si was confirmed by I-V measurements. I-V characteristic of the p-Si-ZnO heterojunction was studied and rectification was observed. The maximum value of forward to reverse current ratio was ~15 at 3.0 V.
机译：氧化锌（ZnO）薄膜通过称为SILAR的化学浸渍技术从锌酸铵浴中沉积在p-硅（Si）衬底上。可以通过更改固定浓度（0.125 M）的锌酸盐浴液和固定pH（11.00-11.10）的浸渍次数来制备厚度范围为0.5-4.5μm的薄膜。较高的浸渍值会产生不粘和质量差的薄膜。 X射线衍射（XRD）的结构表征表明形成了具有强c轴取向的多晶单相ZnO。发现膜的结构特征是膜厚度的敏感函数。发现取向度是膜厚度的函数，并且发现最大值在约2.2μm处。扫描电子显微镜（SEM）揭示了在硅衬底上形成亚微米微晶。衬底表面上的微晶（晶粒）覆盖率随浸入次数的增加而增加。以大的厚度获得了包含遍布整个表面的晶粒的致密膜。通过I-V测量证实了ZnO上的银（Ag）和p-Si上的铝（Al）的欧姆性质。研究了p-Si / n-ZnO异质结的I-V特性，并观察了整流。在3.0 V时正向和反向电流比的最大值约为15。

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