Hidden spin-polarized bands in semiconducting 2H-MoTe2

R. Oliva; T. Wo?niak; F. Dybala; J. Kopaczek; P. Scharoch; R. Kudrawiec

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Hidden spin-polarized bands in semiconducting 2H-MoTe2

机译：半导体2H-MoTe2中的隐藏自旋极化带

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We present experimental and theoretical studies of the electronic band structure of 2H-MoTe_(2) at high hydrostatic pressures. Photoreflectance measurements allowed the determination of the pressure coefficient of the direct transitions A and B, which are 2.40(3) and ?3.42(18) meV/kbar, respectively. We attribute the sign difference to a strong splitting of the conduction bands with increasing pressure and the presence of hidden spin-polarized states in bulk MoTe_(2). These results provide direct experimental evidence that the spin–valley locking effect takes place in centrosymmetric transition metal dichalcogenides.

机译：我们目前在高静水压力下2H-MoTe_（2）电子能带结构的实验和理论研究。通过光反射测量，可以确定直接转变A和B的压力系数，分别为2.40（3）和？3.42（18）meV / kbar。我们将符号差异归因于传导带随着压力的增加而强烈分裂，以及块状MoTe_（2）中存在隐藏的自旋极化态。这些结果提供了直接的实验证据，表明自旋谷锁定作用发生在中心对称过渡金属二硫代双氰化物中。

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《Materials Research Letters》 |2020年第2期|共7页
作者
R. Oliva; T. Wo?niak; F. Dybala; J. Kopaczek; P. Scharoch; R. Kudrawiec;
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中图分类一般工业技术;
关键词
Transition metal dichalcogenidesphotoreflectancespin–valley lockingdensity functional theorytwo-dimensional materials;

机译：过渡金属二卤化物光反射自旋-谷锁定密度泛函理论二维材料;

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Hidden spin-polarized bands in semiconducting 2H-MoTe2

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