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首页> 外文期刊>Micro and Nano Systems Letters >Determination of precise crystallographic directions on Si{111} wafers using self-aligning pre-etched pattern
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Determination of precise crystallographic directions on Si{111} wafers using self-aligning pre-etched pattern

机译：使用自对准预蚀刻图案确定Si {111}晶片上的精确晶体学方向

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Silicon wet anisotropic etching based bulk micromachining technique is widely used for the fabrication of microelectromechanical systems components. In this technique of microfabrication, alignment of mask edges with crystallographic directions plays a crucial role to avoid unwanted undercutting to control the dimensions of fabricated structures. Various kinds of pre-etched designs have been reported to identify the crystallographic directions (e.g. ?110? and ?100?) on Si{100} and Si{110} wafer surfaces. To the best of our knowledge, no pre-etched design has been reported to identify crystal directions on Si{111} wafer. In this work, a self-aligning technique based on pre-etched patterns has been investigated to precisely determine the ?110? direction on Si{111} wafer surface. In this technique, a set of circular shape mask patterns close to wafer edge are etched for the identification of ?110? direction. On wet anisotropic etching these patterns transform to hexagonal shapes. The notches of hexagonal patterns align precisely along a straight line only when they lie on exact ?110? direction. The self-aligned notches can easily be identified by visual inspection using an optical microscope. The major advantages of this technique are simplicity, precision, and self-alignment. In addition, the pre-etched patterns at the wafer periphery occupy very less place.
机译：基于硅湿法各向异性蚀刻的体微机械加工技术被广泛用于制造微机电系统组件。在这种微细加工技术中，掩模边缘与晶体学方向的对准起着至关重要的作用，以避免不必要的底切来控制所加工结构的尺寸。已经报道了各种预蚀刻设计，以识别Si {100}和Si {110}晶片表面上的晶体学方向（例如，“ 110”和“ 100”）。据我们所知，尚未有任何预蚀刻设计可以识别Si {111}晶片上的晶体方向。在这项工作中，已经研究了一种基于预蚀刻图案的自对准技术，以精确地确定“ 110”。 Si {111}晶片表面上的方向。在该技术中，刻蚀一组接近晶片边缘的圆形掩模图案，以识别“ 110”。方向。在湿法各向异性蚀刻中，这些图案转变为六边形形状。六边形图案的凹口只有在精确地位于“ 110”上时才沿着直线精确对齐。方向。通过使用光学显微镜进行目视检查，可以轻松识别出自动对准的缺口。该技术的主要优点是简单，精确和自对准。另外，在晶片外围的预蚀刻图案占据很少的位置。

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