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Gas sensing properties of nanocrystalline silicon carbide films

机译:纳米晶碳化硅薄膜的气敏特性

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The influence of the air atmosphere on the electrical conductivity of nanocrystalline thin SiC films obtained by method of direct ion deposition on sapphire was studied. Measurements were performed on two series of nc-SiC films with different structure: one series contained mainly 3C-SiC polytype nanocrystals and were denoted as monopolytypic, the second series were a nanoheterostructures based on a mixture of 3C-SiC and 21R-SiC nanocrystals. Gas sensitivity of the films appeared after annealing in vacuum at temperatures above 500?K. Measurements of the gas sensitivity of the films to the air atmosphere at a temperature of 700 K showed that the resistance increased for 12 times for the monopolytype film, while the heteropolytype film showed an increase of resistance for almost 16 times.
机译:研究了空气气氛对通过在蓝宝石上直接离子沉积方法获得的纳米晶SiC薄膜的电导率的影响。对具有不同结构的两个系列的nc-SiC膜进行了测量:一个系列主要包含3C-SiC多型纳米晶体,被表示为单型,第二系列是基于3C-SiC和21R-SiC纳米晶体的混合物的纳米异质结构。在真空中在高于500?K的温度下退火后,薄膜的气体敏感性出现。在700K的温度下对空气的薄膜的气体敏感性的测量结果表明,对于单片型薄膜,电阻增加了12倍,而对多片型薄膜的电阻增加了近16倍。

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