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Corrigendum: On-chip light sources for silicon photonics

机译:勘误:硅光子的片上光源

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In the version of this article originally published, the substrate used in reference 111 to grow InAs/GaAs quantum dots was silicon. However, theauthors have found out that 500 nm of germanium was first grown on silicon by chemical vapor deposition before growing InAs/GaAs quantumdots. Therefore, the InAs/GaAs quantum dots reported in reference 111 are actually grown on Ge-on-Si substrate. Therefore
机译:在最初发表的这篇文章的版本中,参考文献111中用于生长InAs / GaAs量子点的衬底是硅。然而,作者发现在生长InAs / GaAs量子点之前,首先通过化学气相沉积法在硅上生长了500 nm锗。因此,参考文献111中报道的InAs / GaAs量子点实际上生长在Si上Ge衬底上。因此

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