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首页> 外文期刊>Reviews on Advanced Materials Science >Carrier Mobility in Organic Semiconductor Thin Films
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Carrier Mobility in Organic Semiconductor Thin Films

机译:有机半导体薄膜中的载流子迁移率

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Carrier mobility is an important parameter in determining device performance in electronics and the values of the electron and hole mobilities for organic semiconductor thin films are known to be rather low. This work studied some reported data on electron and hole mobilities in the literature and analyzed them using a barrier height modulation model and the better known "disorder" model [4]. Our results indicated that the physics behind the two models could be correlated and both pointed to some limiting values pertaining to the localization of the carriers. By comparing the results with an evaluation of the potential profiles across a given cross section of the monomer backbone (for OC1C10PPV) with different subgroups, we were able to deduce that the "localized" states were not directly associated with the energy bands. This provides an opportunity to increase the carrier mobility to its upper limit by applying a transverse bias
机译:载流子迁移率是确定电子设备性能的重要参数,并且已知有机半导体薄膜的电子迁移率和空穴迁移率的值很低。这项工作研究了文献中有关电子和空穴迁移率的一些报道数据,并使用势垒高度调制模型和更广为人知的“无序”模型对其进行了分析[4]。我们的结果表明,这两种模型背后的物理性质可以相互关联,并且都指出了与载流子定位有关的一些极限值。通过将结果与评估具有不同亚组的单体主链给定横截面(对于OC 1 C 10 PPV)​​的势能曲线进行评估,我们能够推断“局部”状态与能带不直接相关。这提供了通过施加横向偏置将载流子迁移率提高到其上限的机会

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