首页> 外文期刊>Results in Physics >Novel Kerr-Vernier effects within the on-chip Si-ChG microring circuits
【24h】

Novel Kerr-Vernier effects within the on-chip Si-ChG microring circuits

机译:片上Si-ChG微环电路中的新型Kerr-Vernier效应

获取原文
           

摘要

We propose a new concept of the nonlinear effect called the Kerr-Vernier effect by using cascaded Si-ChG microring circuits. The circuit is simulated for two materials of different refractive indices which results in phase difference in propagating light and hence observed in the output signal. By varying the input power into the system, the Vernier effects in terms of the Kerr-Vernier effects are seen. In application, the comparative results of the two-channel outputs are used to form the phase sensors, while the self-calibration between the two-channel outputs can be performed. The change in wavelength at the whispering gallery mode of 8 nm is achieved when the applied input power was fixed at 10 mW. A sensitivity of ~120?μm?W-1is obtained for this proposed sensor.
机译:通过使用级联的Si-ChG微环电路,我们提出了非线性效应的新概念,称为Kerr-Vernier效应。针对两种具有不同折射率的材料对电路进行了仿真,这会导致传播的光发生相位差,从而在输出信号中观察到。通过改变系统的输入功率,就可以看到用Kerr-Vernier效应表示的Vernier效应。在应用中,使用两通道输出的比较结果来形成相位传感器,同时可以执行两通道输出之间的自校准。当施加的输入功率固定为10 mW时,在8 nm的回音壁模式下,波长发生了变化。该传感器的灵敏度为〜120?μm?W-1。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号