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首页> 外文期刊>Open Journal of Microphysics >On a Predictive Scheme of Slow Photoconductive Gain Evolution in Epitaxial Layer/Substrate Optoelectronic Nanodevices
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On a Predictive Scheme of Slow Photoconductive Gain Evolution in Epitaxial Layer/Substrate Optoelectronic Nanodevices

机译：外延层/衬底光电纳米器件中光导增益缓慢演化的预测方案

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摘要

The photoconductive response of the fundamental type of diodic nanodevice comprising a low resistivity, n-type epitaxial layer and a semi-insulating substrate is considered in terms of the optoelectronic parameter of photoconductive gain as experimentally measurable through monitoring the temporal evolution of conductivity current photoenhancement under continuous epilayer illumination-exposure. A modelling taking into account the built-in potential barrier of the interface of the epitaxial layer/substrate device (ESD) as well as its modification by the photovoltage induced within the illuminated ESD diode leads to predicting the technologically exploitable possibility of a notably slow photonic dose-evolution (exposure time-development) of the optonanoelectronics ESD photoconductive gain.
机译：可以通过监测电导率电流光增强在时间上的变化，通过实验可测量的光电导增益的光电参数来考虑包括低电阻率，n型外延层和半绝缘衬底的基本类型的二极管纳米器件的光电导响应。连续外延层照射。考虑外延层/衬底器件（ESD）界面的内置势垒及其在照明的ESD二极管中感应的光电压对其进行的修改，可以进行建模，从而预测出技术上可利用的显着缓慢的光子学可能性Optonanoelectronics ESD光电导增益的剂量变化（曝光时间发展）。

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