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Technology Evaluation and Selection of 3DIC Integration Using a Three-Stage Fuzzy MCDM

机译：三阶段模糊MCDM的3DIC集成技术评估与选择

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摘要

For the purpose of the sustainable development in the global semiconductor industry, emerging three-dimensional integrated circuit (3DIC) integration technologies have demonstrated their importance as potential candidates for extending the lifespan of Moore’s Law. This study aimed to explore a technology selection process involving a three-stage fuzzy multicriteria decision-making (MCDM) approach to facilitate the effective assessment of emerging 3DIC integration technologies. The fuzzy Delphi method was first used to determine the important criteria. The fuzzy analytic hierarchy process (fuzzy AHP) was then adopted to derive the weights of the criteria. The fuzzy technique for order of preference by similarity to ideal solution (fuzzy TOPSIS) was finally deployed to rate the alternatives. Empirical results indicate that market potential, time-to-market, and heterogeneous integration are the top three decision criteria for the selection of 3DIC integration technologies. Furthermore, 2.5D through-silicon interposer (TSI) is of primary interest to the Taiwanese semiconductor industry, followed by 3DIC through-silicon via (TSV), 3D packaging, and 3D silicon TSV (Si TSV). The proposed three-stage fuzzy decision model may potentially assist industry practitioners and government policy-makers in directing research and development investments and allocating resources more strategically.
机译：为了实现全球半导体行业的可持续发展，新兴的三维集成电路（3DIC）集成技术已显示出它们作为延长摩尔定律寿命的潜在候选者的重要性。这项研究旨在探索一种技术选择过程，该过程涉及三阶段模糊多准则决策（MCDM）方法，以促进对新兴3DIC集成技术的有效评估。首先使用模糊德尔菲法确定重要标准。然后采用模糊层次分析法（模糊层次分析法）得出准则的权重。最终采用了与理想解决方案相似的模糊排序技术（模糊TOPSIS）来对备选方案进行评分。实证结果表明，市场潜力，上市时间和异构集成是选择3DIC集成技术的三大决策标准。此外，台湾半导体行业最关注的是2.5D穿硅中介层（TSI），其次是3DIC穿硅过孔（TSV），3D封装和3D硅TSV（Si TSV）。提议的三阶段模糊决策模型可能会潜在地帮助行业从业者和政府决策者指导研发投资并更具战略意义地分配资源。

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